Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 191-198 |
| Seitenumfang | 8 |
| Fachzeitschrift | ACS Applied Optical Materials |
| Jahrgang | 2 |
| Ausgabenummer | 1 |
| Frühes Online-Datum | 10 Jan. 2024 |
| Publikationsstatus | Veröffentlicht - 26 Jan. 2024 |
Abstract
We report on the excitonic resonance reflectance characteristics of MoSe2 monolayers (MLs) exfoliated on epitaxial Gd2O3(111)/Si(111) thin films. We demonstrate that the reflectance of MoSe2 MLs can be modulated by varying the thickness of the epitaxial Gd2O3 layer. Upon increasing the Gd2O3 layer thickness from 6 to 50 nm, the resonance reflectance modulation increases by 3-fold and the line-shape changes from Lorentzian to asymmetric Fano-like resonance. We demonstrate that the observed phenomena are a direct consequence of multiple reflections of light within the dielectric layer that interferes with the excitonic Lorentzian oscillator.
ASJC Scopus Sachgebiete
- Chemie (insg.)
- Spektroskopie
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
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in: ACS Applied Optical Materials, Jahrgang 2, Nr. 1, 26.01.2024, S. 191-198.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Interference-Modulated Excitonic Reflectance of Monolayer MoSe2 on Epitaxial Gd2O3 Thin Films
AU - Ghosh, Kritika
AU - Fissel, A.
AU - Osten, H. J.
AU - Roy Chaudhuri, Ayan
N1 - Funding Information: The authors acknowledge Dr. S. Dhara, A. Dhara, and D. Chakrabarty, department of Physics, IIT Kharagpur for experimental support, SERB (CRG/2021/000811, CRG/2018/002845) for partial financial support of the work. K.G. acknowledges DST-INSPIRE FELLOWSHIP (IF180046). A.R.C. acknowledges a fellowship from Alexander von Humboldt foundation.
PY - 2024/1/26
Y1 - 2024/1/26
N2 - We report on the excitonic resonance reflectance characteristics of MoSe2 monolayers (MLs) exfoliated on epitaxial Gd2O3(111)/Si(111) thin films. We demonstrate that the reflectance of MoSe2 MLs can be modulated by varying the thickness of the epitaxial Gd2O3 layer. Upon increasing the Gd2O3 layer thickness from 6 to 50 nm, the resonance reflectance modulation increases by 3-fold and the line-shape changes from Lorentzian to asymmetric Fano-like resonance. We demonstrate that the observed phenomena are a direct consequence of multiple reflections of light within the dielectric layer that interferes with the excitonic Lorentzian oscillator.
AB - We report on the excitonic resonance reflectance characteristics of MoSe2 monolayers (MLs) exfoliated on epitaxial Gd2O3(111)/Si(111) thin films. We demonstrate that the reflectance of MoSe2 MLs can be modulated by varying the thickness of the epitaxial Gd2O3 layer. Upon increasing the Gd2O3 layer thickness from 6 to 50 nm, the resonance reflectance modulation increases by 3-fold and the line-shape changes from Lorentzian to asymmetric Fano-like resonance. We demonstrate that the observed phenomena are a direct consequence of multiple reflections of light within the dielectric layer that interferes with the excitonic Lorentzian oscillator.
KW - dielectric thickness
KW - high-κ dielectric
KW - multiple reflection
KW - optical interference
KW - transfer matrix method
UR - http://www.scopus.com/inward/record.url?scp=85186109903&partnerID=8YFLogxK
U2 - 10.1021/acsaom.3c00397
DO - 10.1021/acsaom.3c00397
M3 - Article
AN - SCOPUS:85186109903
VL - 2
SP - 191
EP - 198
JO - ACS Applied Optical Materials
JF - ACS Applied Optical Materials
SN - 2771-9855
IS - 1
ER -