Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Autoren

  • H. Joerg Osten
  • Malte Czernohorsky
  • Eberhard Bugiel
  • Dirk Kuehne
  • Andreas Fissel

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Details

OriginalspracheEnglisch
Seiten (von - bis)137-142
Seitenumfang6
FachzeitschriftMaterials Research Society Symposium Proceedings
Jahrgang917
Ausgabenummer1
PublikationsstatusVeröffentlicht - 1 Dez. 2006
Veranstaltung2006 MRS Spring Meeting - San Francisco, CA, USA / Vereinigte Staaten
Dauer: 17 Apr. 2006 → 21 Apr. 2006

Abstract

We investigated the influence of additional oxygen supply and temperature during the growth of thin Gd2O3 layers on Si(001) with molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly; however too high oxygen partial pressures lead to an increase in the lower permittivity interfacial layer thickness. The growth temperature mainly influences the dielectric gate stack properties due to changes of the Gd2O3/Si interface structure. Optimized conditions (600°C, po2 = 5·10-7 mbar) were found to achieve equivalent oxide thickness values below 1 nm accompanied by leakage current densities below 1 mA/cm2 at 1 V.

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Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon. / Osten, H. Joerg; Czernohorsky, Malte; Bugiel, Eberhard et al.
in: Materials Research Society Symposium Proceedings, Jahrgang 917, Nr. 1, 01.12.2006, S. 137-142.

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Osten, HJ, Czernohorsky, M, Bugiel, E, Kuehne, D & Fissel, A 2006, 'Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon', Materials Research Society Symposium Proceedings, Jg. 917, Nr. 1, S. 137-142. https://doi.org/10.1557/proc-0917-e10-04
Osten, H. J., Czernohorsky, M., Bugiel, E., Kuehne, D., & Fissel, A. (2006). Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon. Materials Research Society Symposium Proceedings, 917(1), 137-142. https://doi.org/10.1557/proc-0917-e10-04
Osten HJ, Czernohorsky M, Bugiel E, Kuehne D, Fissel A. Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon. Materials Research Society Symposium Proceedings. 2006 Dez 1;917(1):137-142. doi: 10.1557/proc-0917-e10-04
Osten, H. Joerg ; Czernohorsky, Malte ; Bugiel, Eberhard et al. / Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon. in: Materials Research Society Symposium Proceedings. 2006 ; Jahrgang 917, Nr. 1. S. 137-142.
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AU - Osten, H. Joerg

AU - Czernohorsky, Malte

AU - Bugiel, Eberhard

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AU - Fissel, Andreas

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SP - 137

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