Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on Silicon

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Autorschaft

  • Y. Y. Gomeniuk
  • Y. V. Gomeniuk
  • A. N. Nazarov
  • V. S. Lysenko
  • H. J. Osten
  • A. Laha

Organisationseinheiten

Externe Organisationen

  • Institute of Semiconductors Physics National Academy of Sciences in Ukraine
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des SammelwerksECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
Herausgeber (Verlag)Electrochemical Society, Inc.
Seiten353-358
Seitenumfang6
Auflage6
ISBN (elektronisch)9781607680932
ISBN (Print)9781566777438
PublikationsstatusVeröffentlicht - 2009
Veranstaltung7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Österreich
Dauer: 5 Okt. 2009 → 7 Okt. 2009

Publikationsreihe

NameECS Transactions
Nummer6
Band25
ISSN (Print)1938-5862
ISSN (elektronisch)1938-6737

Abstract

The paper presents the results of electrical characterization of the interface and bulk properties of high-k Gd2O3 and Nd 2O3 dielectrics epitaxially grown on silicon substrates. The limitations of the conductance technique for correct determination of the interface state density due to the presence of leakage currents through the dielectric are discussed. The charge carrier transport through the dielectric film was found to occur via the variable-range hopping conductance mechanism.

ASJC Scopus Sachgebiete

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Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on Silicon. / Gomeniuk, Y. Y.; Gomeniuk, Y. V.; Nazarov, A. N. et al.
ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6. Aufl. Electrochemical Society, Inc., 2009. S. 353-358 (ECS Transactions; Band 25, Nr. 6).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Gomeniuk, YY, Gomeniuk, YV, Nazarov, AN, Lysenko, VS, Osten, HJ & Laha, A 2009, Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on Silicon. in ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6 Aufl., ECS Transactions, Nr. 6, Bd. 25, Electrochemical Society, Inc., S. 353-358, 7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society, Vienna, Österreich, 5 Okt. 2009. https://doi.org/10.1149/1.3206634
Gomeniuk, Y. Y., Gomeniuk, Y. V., Nazarov, A. N., Lysenko, V. S., Osten, H. J., & Laha, A. (2009). Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on Silicon. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7 (6 Aufl., S. 353-358). (ECS Transactions; Band 25, Nr. 6). Electrochemical Society, Inc.. https://doi.org/10.1149/1.3206634
Gomeniuk YY, Gomeniuk YV, Nazarov AN, Lysenko VS, Osten HJ, Laha A. Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on Silicon. in ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6 Aufl. Electrochemical Society, Inc. 2009. S. 353-358. (ECS Transactions; 6). doi: 10.1149/1.3206634
Gomeniuk, Y. Y. ; Gomeniuk, Y. V. ; Nazarov, A. N. et al. / Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on Silicon. ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6. Aufl. Electrochemical Society, Inc., 2009. S. 353-358 (ECS Transactions; 6).
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