Interface and Bulk Properties of High-k Gadolinium and Neodymium Oxides on Silicon

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Autoren

  • Y. Y. Gomeniuk
  • Y. V. Gomeniuk
  • A. N. Nazarov
  • V. S. Lysenko
  • H. J. Osten
  • A. Laha

Organisationseinheiten

Externe Organisationen

  • Institute of Semiconductors Physics National Academy of Sciences in Ukraine
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des SammelwerksNanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices
Seiten167-178
Seitenumfang12
PublikationsstatusVeröffentlicht - 4 Juli 2011
Veranstaltung6th International Workshop on Semiconductor-on-Insulator Materials and Devices - Kyiv, Ukraine
Dauer: 24 Okt. 2010 → 28 Okt. 2010

Publikationsreihe

NameAdvanced Materials Research
Band276
ISSN (Print)1022-6680

Abstract

The paper presents the results of electrical characterization of the interface and bulk properties of high-k Gd2O3 and Nd 2O3 dielectrics epitaxially grown on silicon substrates. The limitations of the conductance technique for correct determination of the interface state density due to the presence of leakage currents through the dielectric are discussed. The charge carrier transport through the dielectric film was found to occur via the variable-range hopping conductance mechanism. The density of the interface states and their energy distribution for (100) and (111) Si orientation and the Gd2O3/Si and Nd 2O3/Si interfaces were determined. The density and energy location of the bulk localized states in the band gap of the Gd 2O3 and Nd2O3 dielectrics were estimated and a plausible nature of the observed defects was suggested.

ASJC Scopus Sachgebiete

Zitieren

Interface and Bulk Properties of High-k Gadolinium and Neodymium Oxides on Silicon. / Gomeniuk, Y. Y.; Gomeniuk, Y. V.; Nazarov, A. N. et al.
Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices. 2011. S. 167-178 (Advanced Materials Research; Band 276).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Gomeniuk, YY, Gomeniuk, YV, Nazarov, AN, Lysenko, VS, Osten, HJ & Laha, A 2011, Interface and Bulk Properties of High-k Gadolinium and Neodymium Oxides on Silicon. in Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices. Advanced Materials Research, Bd. 276, S. 167-178, 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, Kyiv, Ukraine, 24 Okt. 2010. https://doi.org/10.4028/www.scientific.net/AMR.276.167
Gomeniuk, Y. Y., Gomeniuk, Y. V., Nazarov, A. N., Lysenko, V. S., Osten, H. J., & Laha, A. (2011). Interface and Bulk Properties of High-k Gadolinium and Neodymium Oxides on Silicon. In Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices (S. 167-178). (Advanced Materials Research; Band 276). https://doi.org/10.4028/www.scientific.net/AMR.276.167
Gomeniuk YY, Gomeniuk YV, Nazarov AN, Lysenko VS, Osten HJ, Laha A. Interface and Bulk Properties of High-k Gadolinium and Neodymium Oxides on Silicon. in Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices. 2011. S. 167-178. (Advanced Materials Research). doi: 10.4028/www.scientific.net/AMR.276.167
Gomeniuk, Y. Y. ; Gomeniuk, Y. V. ; Nazarov, A. N. et al. / Interface and Bulk Properties of High-k Gadolinium and Neodymium Oxides on Silicon. Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices. 2011. S. 167-178 (Advanced Materials Research).
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@inproceedings{3d9da45fd92e452e8f57e1821c68cd8e,
title = "Interface and Bulk Properties of High-k Gadolinium and Neodymium Oxides on Silicon",
abstract = "The paper presents the results of electrical characterization of the interface and bulk properties of high-k Gd2O3 and Nd 2O3 dielectrics epitaxially grown on silicon substrates. The limitations of the conductance technique for correct determination of the interface state density due to the presence of leakage currents through the dielectric are discussed. The charge carrier transport through the dielectric film was found to occur via the variable-range hopping conductance mechanism. The density of the interface states and their energy distribution for (100) and (111) Si orientation and the Gd2O3/Si and Nd 2O3/Si interfaces were determined. The density and energy location of the bulk localized states in the band gap of the Gd 2O3 and Nd2O3 dielectrics were estimated and a plausible nature of the observed defects was suggested.",
keywords = "High-k dielectric, Interface state density, Rare-earth metal oxide",
author = "Gomeniuk, {Y. Y.} and Gomeniuk, {Y. V.} and Nazarov, {A. N.} and Lysenko, {V. S.} and Osten, {H. J.} and A. Laha",
year = "2011",
month = jul,
day = "4",
doi = "10.4028/www.scientific.net/AMR.276.167",
language = "English",
isbn = "9783037851784",
series = "Advanced Materials Research",
pages = "167--178",
booktitle = "Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices",
note = "6th International Workshop on Semiconductor-on-Insulator Materials and Devices ; Conference date: 24-10-2010 Through 28-10-2010",

}

Download

TY - GEN

T1 - Interface and Bulk Properties of High-k Gadolinium and Neodymium Oxides on Silicon

AU - Gomeniuk, Y. Y.

AU - Gomeniuk, Y. V.

AU - Nazarov, A. N.

AU - Lysenko, V. S.

AU - Osten, H. J.

AU - Laha, A.

PY - 2011/7/4

Y1 - 2011/7/4

N2 - The paper presents the results of electrical characterization of the interface and bulk properties of high-k Gd2O3 and Nd 2O3 dielectrics epitaxially grown on silicon substrates. The limitations of the conductance technique for correct determination of the interface state density due to the presence of leakage currents through the dielectric are discussed. The charge carrier transport through the dielectric film was found to occur via the variable-range hopping conductance mechanism. The density of the interface states and their energy distribution for (100) and (111) Si orientation and the Gd2O3/Si and Nd 2O3/Si interfaces were determined. The density and energy location of the bulk localized states in the band gap of the Gd 2O3 and Nd2O3 dielectrics were estimated and a plausible nature of the observed defects was suggested.

AB - The paper presents the results of electrical characterization of the interface and bulk properties of high-k Gd2O3 and Nd 2O3 dielectrics epitaxially grown on silicon substrates. The limitations of the conductance technique for correct determination of the interface state density due to the presence of leakage currents through the dielectric are discussed. The charge carrier transport through the dielectric film was found to occur via the variable-range hopping conductance mechanism. The density of the interface states and their energy distribution for (100) and (111) Si orientation and the Gd2O3/Si and Nd 2O3/Si interfaces were determined. The density and energy location of the bulk localized states in the band gap of the Gd 2O3 and Nd2O3 dielectrics were estimated and a plausible nature of the observed defects was suggested.

KW - High-k dielectric

KW - Interface state density

KW - Rare-earth metal oxide

UR - http://www.scopus.com/inward/record.url?scp=79960416051&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/AMR.276.167

DO - 10.4028/www.scientific.net/AMR.276.167

M3 - Conference contribution

AN - SCOPUS:79960416051

SN - 9783037851784

T3 - Advanced Materials Research

SP - 167

EP - 178

BT - Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices

T2 - 6th International Workshop on Semiconductor-on-Insulator Materials and Devices

Y2 - 24 October 2010 through 28 October 2010

ER -