Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Physics of Semiconductors |
| Untertitel | Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012 |
| Herausgeber (Verlag) | American Institute of Physics Inc. |
| Seiten | 289-290 |
| Seitenumfang | 2 |
| ISBN (Print) | 9780735411944 |
| Publikationsstatus | Veröffentlicht - 31 Dez. 2013 |
| Veranstaltung | 31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Schweiz Dauer: 29 Juli 2012 → 3 Aug. 2012 |
Publikationsreihe
| Name | AIP Conference Proceedings |
|---|---|
| Band | 1566 |
| ISSN (Print) | 0094-243X |
| ISSN (elektronisch) | 1551-7616 |
Abstract
A strong negative magnetoresistance is observed in a high-mobility two-dimensional electron gas in a GaAs/Al0.3Ga0.7As quantum well. We discuss that the negative magnetoresistance consists of a small peak induced by a combination of two types of disorder and a huge magnetoresistance explained by the interaction correction to the conductivity for mixed disorder.
ASJC Scopus Sachgebiete
- Agrar- und Biowissenschaften (insg.)
- Ökologie, Evolution, Verhaltenswissenschaften und Systematik
- Umweltwissenschaften (insg.)
- Ökologie
- Agrar- und Biowissenschaften (insg.)
- Pflanzenkunde
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
- Umweltwissenschaften (insg.)
- Natur- und Landschaftsschutz
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Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. American Institute of Physics Inc., 2013. S. 289-290 (AIP Conference Proceedings; Band 1566).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Interaction-induced huge magnetoresistance in a high mobility two-dimensional electron gas
AU - Bockhorn, L.
AU - Gornyi, I. V.
AU - Schuh, D.
AU - Wegscheider, W.
AU - Haug, R. J.
PY - 2013/12/31
Y1 - 2013/12/31
N2 - A strong negative magnetoresistance is observed in a high-mobility two-dimensional electron gas in a GaAs/Al0.3Ga0.7As quantum well. We discuss that the negative magnetoresistance consists of a small peak induced by a combination of two types of disorder and a huge magnetoresistance explained by the interaction correction to the conductivity for mixed disorder.
AB - A strong negative magnetoresistance is observed in a high-mobility two-dimensional electron gas in a GaAs/Al0.3Ga0.7As quantum well. We discuss that the negative magnetoresistance consists of a small peak induced by a combination of two types of disorder and a huge magnetoresistance explained by the interaction correction to the conductivity for mixed disorder.
KW - Electron Interaction Correction
KW - Fractional Quantum Hall Effect
KW - Negative Magnetoresistance
UR - http://www.scopus.com/inward/record.url?scp=84907312926&partnerID=8YFLogxK
U2 - 10.1063/1.4848399
DO - 10.1063/1.4848399
M3 - Conference contribution
AN - SCOPUS:84907312926
SN - 9780735411944
T3 - AIP Conference Proceedings
SP - 289
EP - 290
BT - Physics of Semiconductors
PB - American Institute of Physics Inc.
T2 - 31st International Conference on the Physics of Semiconductors, ICPS 2012
Y2 - 29 July 2012 through 3 August 2012
ER -