Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 185-188 |
| Seitenumfang | 4 |
| Fachzeitschrift | Microporous and Mesoporous Materials |
| Jahrgang | 265 |
| Frühes Online-Datum | 17 Feb. 2018 |
| Publikationsstatus | Veröffentlicht - 15 Juli 2018 |
Abstract
Integrating nanoporous metal-organic frameworks, MOFs, in electrical devices enables various applications, for instance, as sensor or memristor. The incorporation of thin MOF films in metal-insulator-semiconductor, MIS, capacitor structures is particularly attractive, since its operation at low voltages enables real-life applications. Here, thin Cu3(BTC)2, also referred to as HKUST-1, MOF films were deposited on thermally grown silicon dioxide surfaces in a layer-by-layer fashion. A peak of the conductance is observed, an evidence for interface states. Temperature dependent measurements reveal the formation of a counter clockwise hysteresis, due to charge injection mechanism. Finally, capacitance and conductance in strong accumulation decrease as the sample is heated slowly up to 100 °C. The cooling process results in a reverse process. Capacitance-voltage and conductance-voltage characteristics, measured in forward and reverse direction at different applied frequencies and temperatures, show the high quality of the interfaces which makes them suitable for advanced sensing and electronic applications.
ASJC Scopus Sachgebiete
- Chemie (insg.)
- Allgemeine Chemie
- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Werkstoffmechanik
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in: Microporous and Mesoporous Materials, Jahrgang 265, 15.07.2018, S. 185-188.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Integration of thin film of metal-organic frameworks in metal-insulator-semiconductor capacitor structures
AU - Montañez, Liz M.
AU - Müller, Kai
AU - Heinke, Lars
AU - Osten, Hans-Jörg
N1 - Funding Information: This research work was supported by the Hannover School of Nanotechnology .
PY - 2018/7/15
Y1 - 2018/7/15
N2 - Integrating nanoporous metal-organic frameworks, MOFs, in electrical devices enables various applications, for instance, as sensor or memristor. The incorporation of thin MOF films in metal-insulator-semiconductor, MIS, capacitor structures is particularly attractive, since its operation at low voltages enables real-life applications. Here, thin Cu3(BTC)2, also referred to as HKUST-1, MOF films were deposited on thermally grown silicon dioxide surfaces in a layer-by-layer fashion. A peak of the conductance is observed, an evidence for interface states. Temperature dependent measurements reveal the formation of a counter clockwise hysteresis, due to charge injection mechanism. Finally, capacitance and conductance in strong accumulation decrease as the sample is heated slowly up to 100 °C. The cooling process results in a reverse process. Capacitance-voltage and conductance-voltage characteristics, measured in forward and reverse direction at different applied frequencies and temperatures, show the high quality of the interfaces which makes them suitable for advanced sensing and electronic applications.
AB - Integrating nanoporous metal-organic frameworks, MOFs, in electrical devices enables various applications, for instance, as sensor or memristor. The incorporation of thin MOF films in metal-insulator-semiconductor, MIS, capacitor structures is particularly attractive, since its operation at low voltages enables real-life applications. Here, thin Cu3(BTC)2, also referred to as HKUST-1, MOF films were deposited on thermally grown silicon dioxide surfaces in a layer-by-layer fashion. A peak of the conductance is observed, an evidence for interface states. Temperature dependent measurements reveal the formation of a counter clockwise hysteresis, due to charge injection mechanism. Finally, capacitance and conductance in strong accumulation decrease as the sample is heated slowly up to 100 °C. The cooling process results in a reverse process. Capacitance-voltage and conductance-voltage characteristics, measured in forward and reverse direction at different applied frequencies and temperatures, show the high quality of the interfaces which makes them suitable for advanced sensing and electronic applications.
KW - Cu(BTC)
KW - Interface traps
KW - Metal-insulator-semiconductor capacitor
KW - Metal-organic frameworks
KW - MIS capacitor
KW - MOFs
UR - http://www.scopus.com/inward/record.url?scp=85042294618&partnerID=8YFLogxK
U2 - 10.1016/j.micromeso.2018.02.018
DO - 10.1016/j.micromeso.2018.02.018
M3 - Article
AN - SCOPUS:85042294618
VL - 265
SP - 185
EP - 188
JO - Microporous and Mesoporous Materials
JF - Microporous and Mesoporous Materials
SN - 1387-1811
ER -