Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Autoren

  • A. Laha
  • A. Fissel
  • E. Bugiel
  • M. Badylevich
  • V. Afanasiev
  • H. J. Osten

Organisationseinheiten

Externe Organisationen

  • KU Leuven
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des SammelwerksProceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices
UntertitelCOMMAD'08
Seiten166-169
Seitenumfang4
PublikationsstatusVeröffentlicht - 2008
Veranstaltung2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 - Sydney, NSW, Australien
Dauer: 28 Juli 2008 → 1 Aug. 2008

Publikationsreihe

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Abstract

Si quantum dots (QD) embedded into Gd2O3 and Si quantum wells (QW) with epitaxial Gd2O3 as the barrier layers were grown on Si substrates. With decreasing dot size down to the 2-nm range, the optical absorption exhibits a spectacular shift in spectral threshold upto 2.9±0.1 eV, as compared to the 1.12 eV absorption edge of the bulk Si crystal. Such shift suggests a significant influence of quantum confinement on the nanocrystal/oxide interface band diagram; the effect of which was observed to be predominantly caused by the upshift of the nanocrystal conduction band. Also, the Pt/Gd2O3/Si MOS capacitors comprised with Si nanoclusters display large hysteresis (∼1.5-2V) in capacitance-voltage measurements making them potential candidate of nonvolatile memory devices.

ASJC Scopus Sachgebiete

Zitieren

Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application. / Laha, A.; Fissel, A.; Bugiel, E. et al.
Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD'08. 2008. S. 166-169 4802118 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Laha, A, Fissel, A, Bugiel, E, Badylevich, M, Afanasiev, V & Osten, HJ 2008, Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application. in Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD'08., 4802118, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, S. 166-169, 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08, Sydney, NSW, Australien, 28 Juli 2008. https://doi.org/10.1109/COMMAD.2008.4802118
Laha, A., Fissel, A., Bugiel, E., Badylevich, M., Afanasiev, V., & Osten, H. J. (2008). Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application. In Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD'08 (S. 166-169). Artikel 4802118 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2008.4802118
Laha A, Fissel A, Bugiel E, Badylevich M, Afanasiev V, Osten HJ. Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application. in Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD'08. 2008. S. 166-169. 4802118. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2008.4802118
Laha, A. ; Fissel, A. ; Bugiel, E. et al. / Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application. Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices: COMMAD'08. 2008. S. 166-169 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).
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title = "Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application",
abstract = "Si quantum dots (QD) embedded into Gd2O3 and Si quantum wells (QW) with epitaxial Gd2O3 as the barrier layers were grown on Si substrates. With decreasing dot size down to the 2-nm range, the optical absorption exhibits a spectacular shift in spectral threshold upto 2.9±0.1 eV, as compared to the 1.12 eV absorption edge of the bulk Si crystal. Such shift suggests a significant influence of quantum confinement on the nanocrystal/oxide interface band diagram; the effect of which was observed to be predominantly caused by the upshift of the nanocrystal conduction band. Also, the Pt/Gd2O3/Si MOS capacitors comprised with Si nanoclusters display large hysteresis (∼1.5-2V) in capacitance-voltage measurements making them potential candidate of nonvolatile memory devices.",
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Download

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AU - Laha, A.

AU - Fissel, A.

AU - Bugiel, E.

AU - Badylevich, M.

AU - Afanasiev, V.

AU - Osten, H. J.

PY - 2008

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BT - Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices

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