TY - JOUR

T1 - Integration of functional epitaxial oxides into silicon

T2 - From high- K application to nanostructures

AU - Osten, H. J.

AU - Kühne, D.

AU - Laha, A.

AU - Czernohorsky, M.

AU - Bugiel, E.

AU - Fissel, A.

PY - 2007/5/31

Y1 - 2007/5/31

N2 - The authors will present results for crystalline lanthanide oxides on silicon with the Ln2 O3 composition (Ln=Pr, Nd, and Gd) in the cubic bixbyite structure grown by solid state molecular beam epitaxy. On Si(100) oriented surfaces, crystalline Ln2 O3 grows as (110)-oriented domains, with two orthogonal in-plane orientations. Layers grown under best vacuum conditions often exhibit poor dielectric properties due to the formation of crystalline interfacial silicide inclusions. Additional oxygen supply during growth improves the dielectric properties significantly. Experimental results for Ln2 O3 -based metal-oxide-semiconductor (MOS) capacitors grown under optimized conditions show that these layers are excellent candidates for application as very thin high- K materials replacing Si O2 in future MOS devices. In addition, they will present a new approach for nanostructure formation which is based on solid-phase epitaxy of the Si quantum well combined with simultaneous vapor-phase epitaxy of the insulator on top of the quantum well. Ultrathin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by this approach on Si(111). Finally, the incorporation of crystalline Si islands into single-crystalline oxide layers will be demonstrated.

AB - The authors will present results for crystalline lanthanide oxides on silicon with the Ln2 O3 composition (Ln=Pr, Nd, and Gd) in the cubic bixbyite structure grown by solid state molecular beam epitaxy. On Si(100) oriented surfaces, crystalline Ln2 O3 grows as (110)-oriented domains, with two orthogonal in-plane orientations. Layers grown under best vacuum conditions often exhibit poor dielectric properties due to the formation of crystalline interfacial silicide inclusions. Additional oxygen supply during growth improves the dielectric properties significantly. Experimental results for Ln2 O3 -based metal-oxide-semiconductor (MOS) capacitors grown under optimized conditions show that these layers are excellent candidates for application as very thin high- K materials replacing Si O2 in future MOS devices. In addition, they will present a new approach for nanostructure formation which is based on solid-phase epitaxy of the Si quantum well combined with simultaneous vapor-phase epitaxy of the insulator on top of the quantum well. Ultrathin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by this approach on Si(111). Finally, the incorporation of crystalline Si islands into single-crystalline oxide layers will be demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=34249898037&partnerID=8YFLogxK

U2 - 10.1116/1.2720858

DO - 10.1116/1.2720858

M3 - Article

AN - SCOPUS:34249898037

VL - 25

SP - 1039

EP - 1043

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 3

ER -