Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 8474970 |
| Seiten (von - bis) | 3446-3454 |
| Seitenumfang | 9 |
| Fachzeitschrift | IEEE J. Solid State Circuits |
| Jahrgang | 53 |
| Ausgabenummer | 12 |
| Publikationsstatus | Veröffentlicht - 2018 |
Abstract
This paper presents a fully integrated gate driver in a 180-nm bipolar CMOS DMOS (BCD) technology with 1.5-A max. gate current, suitable for normally OFF gallium nitride (GaN) power switches, including gate-injection transistors (GIT). Full-bridge driver architecture provides a bipolar and three-level gate drive voltage for a robust and efficient GaN switching. The concept of high-voltage energy storing (HVES), which comprises an on-chip resonant LC tank, enables a very area-efficient buffer capacitor integration and superior gate-driving speed. It reduces the component count and the influence of parasitic gate-loop inductance. Theory and calculations confirm the benefits of HVES compared to other capacitor implementation methods. The proposed gate driver delivers a gate charge of up to 11.6 nC, sufficient to drive most types of currently available GaN power transistors. Consequently, HVES enables to utilize the fast switching capabilities of GaN for advanced and compact power electronics.
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in: IEEE J. Solid State Circuits, Jahrgang 53, Nr. 12, 8474970, 2018, S. 3446-3454.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Integrated Gate Drivers Based on High-Voltage Energy Storing for GaN Transistors.
AU - Seidel, Achim
AU - Wicht, Bernhard
N1 - Funding information: Manuscript received April 27, 2018; revised July 15, 2018 and August 15, 2018; accepted August 16, 2018. Date of publication September 27, 2018; date of current version December 21, 2018. This work was supported in part by the Federal Ministry of Education and Research, Germany, through the ZuGaNG Project, under Grant 16ES0080, and in part by the Ministry of Science, Research and Art of Baden-Württemberg, Germany, through the Framework Program entitled Beyond LBC. This paper was approved by Guest Editor Tai-Haur Kuo. (Corresponding author: Achim Seidel.) A. Seidel is with the Robert Bosch Center for Power Electronics, Reutlingen University, 72768 Reutlingen, Germany (e-mail: achim.seidel@ reutlingen-university.de).
PY - 2018
Y1 - 2018
N2 - This paper presents a fully integrated gate driver in a 180-nm bipolar CMOS DMOS (BCD) technology with 1.5-A max. gate current, suitable for normally OFF gallium nitride (GaN) power switches, including gate-injection transistors (GIT). Full-bridge driver architecture provides a bipolar and three-level gate drive voltage for a robust and efficient GaN switching. The concept of high-voltage energy storing (HVES), which comprises an on-chip resonant LC tank, enables a very area-efficient buffer capacitor integration and superior gate-driving speed. It reduces the component count and the influence of parasitic gate-loop inductance. Theory and calculations confirm the benefits of HVES compared to other capacitor implementation methods. The proposed gate driver delivers a gate charge of up to 11.6 nC, sufficient to drive most types of currently available GaN power transistors. Consequently, HVES enables to utilize the fast switching capabilities of GaN for advanced and compact power electronics.
AB - This paper presents a fully integrated gate driver in a 180-nm bipolar CMOS DMOS (BCD) technology with 1.5-A max. gate current, suitable for normally OFF gallium nitride (GaN) power switches, including gate-injection transistors (GIT). Full-bridge driver architecture provides a bipolar and three-level gate drive voltage for a robust and efficient GaN switching. The concept of high-voltage energy storing (HVES), which comprises an on-chip resonant LC tank, enables a very area-efficient buffer capacitor integration and superior gate-driving speed. It reduces the component count and the influence of parasitic gate-loop inductance. Theory and calculations confirm the benefits of HVES compared to other capacitor implementation methods. The proposed gate driver delivers a gate charge of up to 11.6 nC, sufficient to drive most types of currently available GaN power transistors. Consequently, HVES enables to utilize the fast switching capabilities of GaN for advanced and compact power electronics.
KW - Bootstrap circuit
KW - capacitor integration
KW - charge pump (CP)
KW - gallium nitride (GaN) transistor
KW - gate drive speed
KW - gate driver
KW - gate driver supply
KW - gate-injection transistor (GIT)
KW - resonant gate driver
UR - http://www.scopus.com/inward/record.url?scp=85054417209&partnerID=8YFLogxK
U2 - 10.1109/jssc.2018.2866948
DO - 10.1109/jssc.2018.2866948
M3 - Article
VL - 53
SP - 3446
EP - 3454
JO - IEEE J. Solid State Circuits
JF - IEEE J. Solid State Circuits
SN - 1558-173X
IS - 12
M1 - 8474970
ER -