Injection lasers based on intraband carrier transitions

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

Autoren

  • E. Towe
  • D. Pal
  • L. E. Vorobjev
  • A. Glukhovskoy
  • S. N. Danilov
  • V. L. Zerova
  • V. Yu Panevin
  • D. A. Firsov
  • V. A. Shalygin
  • G. G. Zegrya
  • A. Weber
  • M. Grundmann

Externe Organisationen

  • University of Virginia
  • St. Petersburg State Polytechnical University
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)209-212
Seitenumfang4
FachzeitschriftMaterials Science Forum
Jahrgang384-385
PublikationsstatusVeröffentlicht - 2002
Extern publiziertJa
Veranstaltung11th International Symposium on Ultrafast Phenomena in Semiconductors (11-UFPS) - Vilnius, Litauen
Dauer: 27 Aug. 200129 Aug. 2001

Abstract

Novel designs of mid-infrared lasers based on intersubband electron transitions in funnel shaped quantum wells are suggested. The calculated laser parameters as well as results of photoluminescence and mid-infrared emission studies are presented.

ASJC Scopus Sachgebiete

Zitieren

Injection lasers based on intraband carrier transitions. / Towe, E.; Pal, D.; Vorobjev, L. E. et al.
in: Materials Science Forum, Jahrgang 384-385, 2002, S. 209-212.

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

Towe, E, Pal, D, Vorobjev, LE, Glukhovskoy, A, Danilov, SN, Zerova, VL, Panevin, VY, Firsov, DA, Shalygin, VA, Zegrya, GG, Weber, A & Grundmann, M 2002, 'Injection lasers based on intraband carrier transitions', Materials Science Forum, Jg. 384-385, S. 209-212. https://doi.org/10.4028/www.scientific.net/msf.384-385.209
Towe, E., Pal, D., Vorobjev, L. E., Glukhovskoy, A., Danilov, S. N., Zerova, V. L., Panevin, V. Y., Firsov, D. A., Shalygin, V. A., Zegrya, G. G., Weber, A., & Grundmann, M. (2002). Injection lasers based on intraband carrier transitions. Materials Science Forum, 384-385, 209-212. https://doi.org/10.4028/www.scientific.net/msf.384-385.209
Towe E, Pal D, Vorobjev LE, Glukhovskoy A, Danilov SN, Zerova VL et al. Injection lasers based on intraband carrier transitions. Materials Science Forum. 2002;384-385:209-212. doi: 10.4028/www.scientific.net/msf.384-385.209
Towe, E. ; Pal, D. ; Vorobjev, L. E. et al. / Injection lasers based on intraband carrier transitions. in: Materials Science Forum. 2002 ; Jahrgang 384-385. S. 209-212.
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abstract = "Novel designs of mid-infrared lasers based on intersubband electron transitions in funnel shaped quantum wells are suggested. The calculated laser parameters as well as results of photoluminescence and mid-infrared emission studies are presented.",
keywords = "Auger recombination, Intersubband transitions, Laser, Mid-infrared, Quantum wells",
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TY - JOUR

T1 - Injection lasers based on intraband carrier transitions

AU - Towe, E.

AU - Pal, D.

AU - Vorobjev, L. E.

AU - Glukhovskoy, A.

AU - Danilov, S. N.

AU - Zerova, V. L.

AU - Panevin, V. Yu

AU - Firsov, D. A.

AU - Shalygin, V. A.

AU - Zegrya, G. G.

AU - Weber, A.

AU - Grundmann, M.

PY - 2002

Y1 - 2002

N2 - Novel designs of mid-infrared lasers based on intersubband electron transitions in funnel shaped quantum wells are suggested. The calculated laser parameters as well as results of photoluminescence and mid-infrared emission studies are presented.

AB - Novel designs of mid-infrared lasers based on intersubband electron transitions in funnel shaped quantum wells are suggested. The calculated laser parameters as well as results of photoluminescence and mid-infrared emission studies are presented.

KW - Auger recombination

KW - Intersubband transitions

KW - Laser

KW - Mid-infrared

KW - Quantum wells

UR - http://www.scopus.com/inward/record.url?scp=0036168265&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/msf.384-385.209

DO - 10.4028/www.scientific.net/msf.384-385.209

M3 - Conference article

AN - SCOPUS:0036168265

VL - 384-385

SP - 209

EP - 212

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

T2 - 11th International Symposium on Ultrafast Phenomena in Semiconductors (11-UFPS)

Y2 - 27 August 2001 through 29 August 2001

ER -

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