Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 159-166 |
| Seitenumfang | 8 |
| Fachzeitschrift | Surface science |
| Jahrgang | 504 |
| Frühes Online-Datum | 20 Jan. 2002 |
| Publikationsstatus | Veröffentlicht - 20 Apr. 2002 |
| Extern publiziert | Ja |
Abstract
Pr2O3 may be an alternative high-K gate dielectric material for silicon integrated circuits, i.e., it has a dielectric constant K≥25 and is currently under consideration as potential replacement for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal-oxide-semiconductor technology. Using scanning tunneling microscopy and X-ray photoelectron spectroscopy, we show that the initial stages of heteroepitaxial Pr2O3 grown on Si(001) consist of a mixed PrO2/Pr2O3 phase. First ab initio calculation results also indicate the formation of an ultra-thin Si-O interlayer between the Si substrate and Pr2O3. In the monolayer range of deposited Pr2O3, Auger electron spectroscopy measurements show that the oxide is completely decomposed above 780 °C.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Physik und Astronomie (insg.)
- Oberflächen und Grenzflächen
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Surface science, Jahrgang 504, 20.04.2002, S. 159-166.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Initial stages of praseodymium oxide film formation on Si(001)
AU - Müssig, H. J.
AU - Dabrowski, J.
AU - Ignatovich, K.
AU - Liu, J. P.
AU - Zavodinsky, V.
AU - Osten, H. J.
PY - 2002/4/20
Y1 - 2002/4/20
N2 - Pr2O3 may be an alternative high-K gate dielectric material for silicon integrated circuits, i.e., it has a dielectric constant K≥25 and is currently under consideration as potential replacement for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal-oxide-semiconductor technology. Using scanning tunneling microscopy and X-ray photoelectron spectroscopy, we show that the initial stages of heteroepitaxial Pr2O3 grown on Si(001) consist of a mixed PrO2/Pr2O3 phase. First ab initio calculation results also indicate the formation of an ultra-thin Si-O interlayer between the Si substrate and Pr2O3. In the monolayer range of deposited Pr2O3, Auger electron spectroscopy measurements show that the oxide is completely decomposed above 780 °C.
AB - Pr2O3 may be an alternative high-K gate dielectric material for silicon integrated circuits, i.e., it has a dielectric constant K≥25 and is currently under consideration as potential replacement for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal-oxide-semiconductor technology. Using scanning tunneling microscopy and X-ray photoelectron spectroscopy, we show that the initial stages of heteroepitaxial Pr2O3 grown on Si(001) consist of a mixed PrO2/Pr2O3 phase. First ab initio calculation results also indicate the formation of an ultra-thin Si-O interlayer between the Si substrate and Pr2O3. In the monolayer range of deposited Pr2O3, Auger electron spectroscopy measurements show that the oxide is completely decomposed above 780 °C.
KW - Ab initio quantum chemical methods and calculations
KW - Auger electron spectroscopy
KW - Growth
KW - Scanning tunneling microscopy
KW - Silicon
KW - X-ray photoelectron spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=0037140021&partnerID=8YFLogxK
U2 - 10.1016/S0039-6028(01)01961-6
DO - 10.1016/S0039-6028(01)01961-6
M3 - Article
AN - SCOPUS:0037140021
VL - 504
SP - 159
EP - 166
JO - Surface science
JF - Surface science
SN - 0039-6028
ER -