Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 133-136 |
| Seitenumfang | 4 |
| Fachzeitschrift | THIN SOLID FILMS |
| Jahrgang | 294 |
| Ausgabenummer | 1-2 |
| Publikationsstatus | Veröffentlicht - 12 Dez. 2000 |
| Extern publiziert | Ja |
Abstract
We have performed infrared absorption spectroscopy and X-ray diffraction measurements on strained Si1-yCy layers grown by molecular beam epitaxy on Si substrates. Our experiments show that the formation of substitutional carbon and the appearance of β-SiC precipitates depend on growth rate and growth temperature. Post-growth annealing experiments at temperatures higher than 850°C cause the formation of β-SiC precipitates accompanied by a decrease of substitutional carbon. The simulation of the X-ray data shows that substitutional carbon is lost mainly near the surface. Infrared absorption studies reveal that the loss is accompanied by the formation of β-SiC precipitates in the near-surface region. Post growth moderate annealing experiments below 800°C lead to a smaller linewidth for the carbon vibrational mode, indicating improved crystal quality.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Oberflächen und Grenzflächen
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Werkstoffwissenschaften (insg.)
- Metalle und Legierungen
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: THIN SOLID FILMS, Jahrgang 294, Nr. 1-2, 12.12.2000, S. 133-136.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Infrared spectroscopy of strained Si1-yCy alloys (0≤y≤0.015) grown on silicon
AU - Pressel, K.
AU - Fischer, G. G.
AU - Zaumseil, P.
AU - Kim, Myeongcheol
AU - Osten, H. J.
PY - 2000/12/12
Y1 - 2000/12/12
N2 - We have performed infrared absorption spectroscopy and X-ray diffraction measurements on strained Si1-yCy layers grown by molecular beam epitaxy on Si substrates. Our experiments show that the formation of substitutional carbon and the appearance of β-SiC precipitates depend on growth rate and growth temperature. Post-growth annealing experiments at temperatures higher than 850°C cause the formation of β-SiC precipitates accompanied by a decrease of substitutional carbon. The simulation of the X-ray data shows that substitutional carbon is lost mainly near the surface. Infrared absorption studies reveal that the loss is accompanied by the formation of β-SiC precipitates in the near-surface region. Post growth moderate annealing experiments below 800°C lead to a smaller linewidth for the carbon vibrational mode, indicating improved crystal quality.
AB - We have performed infrared absorption spectroscopy and X-ray diffraction measurements on strained Si1-yCy layers grown by molecular beam epitaxy on Si substrates. Our experiments show that the formation of substitutional carbon and the appearance of β-SiC precipitates depend on growth rate and growth temperature. Post-growth annealing experiments at temperatures higher than 850°C cause the formation of β-SiC precipitates accompanied by a decrease of substitutional carbon. The simulation of the X-ray data shows that substitutional carbon is lost mainly near the surface. Infrared absorption studies reveal that the loss is accompanied by the formation of β-SiC precipitates in the near-surface region. Post growth moderate annealing experiments below 800°C lead to a smaller linewidth for the carbon vibrational mode, indicating improved crystal quality.
KW - Alloys
KW - Carbon
KW - Infrared spectroscopy
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=0031074333&partnerID=8YFLogxK
U2 - 10.1016/S0040-6090(96)09267-X
DO - 10.1016/S0040-6090(96)09267-X
M3 - Article
AN - SCOPUS:0031074333
VL - 294
SP - 133
EP - 136
JO - THIN SOLID FILMS
JF - THIN SOLID FILMS
SN - 0040-6090
IS - 1-2
ER -