Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 87-92 |
| Seitenumfang | 6 |
| Fachzeitschrift | IEEE International Symposium on Electromagnetic Compatibility |
| Jahrgang | 1 |
| Publikationsstatus | Veröffentlicht - 2002 |
| Veranstaltung | 2002 IEEE International Symposium on Electromagnetic Compatibility - Minneapolis, MN, USA / Vereinigte Staaten Dauer: 19 Aug. 2002 → 23 Aug. 2002 |
Abstract
The influence of the technology on the destruction effects of semiconductors by impact of EMP and UWB pulses was presented. The susceptibility of electronic devices to a transient electromagnetic field threat was measured. It was found that the CMOS devices first got reversible breakdowns and at much higher field amplitudes non reversible destructions occurred. The breakdown- (BT) and destruction thresholds (DT) were found to decrease much by extending the ribbon cable length or usage of pulses with faster rise times.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: IEEE International Symposium on Electromagnetic Compatibility, Jahrgang 1, 2002, S. 87-92.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Influence of the technology on the destruction effects of semiconducters by impact of EMP and UWB pulses
AU - Camp, Michael
AU - Garbe, Heyno
AU - Nitsch, Daniel
PY - 2002
Y1 - 2002
N2 - The influence of the technology on the destruction effects of semiconductors by impact of EMP and UWB pulses was presented. The susceptibility of electronic devices to a transient electromagnetic field threat was measured. It was found that the CMOS devices first got reversible breakdowns and at much higher field amplitudes non reversible destructions occurred. The breakdown- (BT) and destruction thresholds (DT) were found to decrease much by extending the ribbon cable length or usage of pulses with faster rise times.
AB - The influence of the technology on the destruction effects of semiconductors by impact of EMP and UWB pulses was presented. The susceptibility of electronic devices to a transient electromagnetic field threat was measured. It was found that the CMOS devices first got reversible breakdowns and at much higher field amplitudes non reversible destructions occurred. The breakdown- (BT) and destruction thresholds (DT) were found to decrease much by extending the ribbon cable length or usage of pulses with faster rise times.
KW - CMOS
KW - EMP
KW - Semiconductor
KW - Susceptibility
KW - TTL
KW - UWB
UR - http://www.scopus.com/inward/record.url?scp=0036385024&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0036385024
VL - 1
SP - 87
EP - 92
JO - IEEE International Symposium on Electromagnetic Compatibility
JF - IEEE International Symposium on Electromagnetic Compatibility
SN - 0190-1494
T2 - 2002 IEEE International Symposium on Electromagnetic Compatibility
Y2 - 19 August 2002 through 23 August 2002
ER -