Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 761-764 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physica E: Low-Dimensional Systems and Nanostructures |
| Jahrgang | 13 |
| Ausgabenummer | 2-4 |
| Publikationsstatus | Veröffentlicht - März 2002 |
Abstract
Self-assembled InAs quantum dots (QDs) grown on AlAs have been embedded in three sample structures for atomic force microscopy (AFM), photoluminescence (PL) and resonant-tunneling measurements. The amount of deposited InAs was varied between nominally 1.6 and 2 monolayers. This leads to a shift of the QD-related PL peak from about 1.9 to 1.6 eV that is due to an increasing QD size as confirmed by AFM images of the reference wafer. With increasing InAs coverage, the onset voltage for single-electron tunneling shifts from 0.3 to 0 V which is explained by the lower lying ground state in the larger QDs. The observed strong dependence of the QD size on the InAs coverage offers up a simple way to adjust the onset voltage for single-electron tunneling via growth parameters.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica E: Low-Dimensional Systems and Nanostructures, Jahrgang 13, Nr. 2-4, 03.2002, S. 761-764.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
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TY - JOUR
T1 - Influence of the size of self-assembled InAs/AlAs quantum dots on photoluminescence and resonant tunneling
AU - Pierz, K.
AU - Ma, Z.
AU - Hapke-Wurst, I.
AU - Keyser, U. F.
AU - Zeitler, U.
AU - Haug, R. J.
N1 - Funding information: This work was supported by the Deutsche Forschungsgemeinschaft DFG (Pi 385/1-1 and Ha 1826/5-1).
PY - 2002/3
Y1 - 2002/3
N2 - Self-assembled InAs quantum dots (QDs) grown on AlAs have been embedded in three sample structures for atomic force microscopy (AFM), photoluminescence (PL) and resonant-tunneling measurements. The amount of deposited InAs was varied between nominally 1.6 and 2 monolayers. This leads to a shift of the QD-related PL peak from about 1.9 to 1.6 eV that is due to an increasing QD size as confirmed by AFM images of the reference wafer. With increasing InAs coverage, the onset voltage for single-electron tunneling shifts from 0.3 to 0 V which is explained by the lower lying ground state in the larger QDs. The observed strong dependence of the QD size on the InAs coverage offers up a simple way to adjust the onset voltage for single-electron tunneling via growth parameters.
AB - Self-assembled InAs quantum dots (QDs) grown on AlAs have been embedded in three sample structures for atomic force microscopy (AFM), photoluminescence (PL) and resonant-tunneling measurements. The amount of deposited InAs was varied between nominally 1.6 and 2 monolayers. This leads to a shift of the QD-related PL peak from about 1.9 to 1.6 eV that is due to an increasing QD size as confirmed by AFM images of the reference wafer. With increasing InAs coverage, the onset voltage for single-electron tunneling shifts from 0.3 to 0 V which is explained by the lower lying ground state in the larger QDs. The observed strong dependence of the QD size on the InAs coverage offers up a simple way to adjust the onset voltage for single-electron tunneling via growth parameters.
KW - Atomic force microscopy
KW - Photoluminescence
KW - Resonant tunneling
KW - Self-assembled quantum dots
KW - Single-electron tunneling
UR - http://www.scopus.com/inward/record.url?scp=0036492822&partnerID=8YFLogxK
U2 - 10.1016/S1386-9477(02)00277-1
DO - 10.1016/S1386-9477(02)00277-1
M3 - Article
AN - SCOPUS:0036492822
VL - 13
SP - 761
EP - 764
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 2-4
ER -