Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Modeling in crystal growth |
| Untertitel | proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000 |
| Erscheinungsort | Amsterdam |
| Herausgeber (Verlag) | Elsevier |
| Seiten | 37-38 |
| Publikationsstatus | Veröffentlicht - 2001 |
| Veranstaltung | 3rd International Workshop on Modeling in Crystal Growth - New York Dauer: 18 Okt. 2000 → 19 Okt. 2000 Konferenznummer: 3 |
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Influence of the crystal orientation on the microscopic crystallization instabilities during FZ silicon crystal growth. / Madzulis, I.; Muiznieks, Andris; Mühlbauer, Alfred et al.
Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier, 2001. S. 37-38.
Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier, 2001. S. 37-38.
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung
Madzulis, I, Muiznieks, A, Mühlbauer, A & Raming, G 2001, Influence of the crystal orientation on the microscopic crystallization instabilities during FZ silicon crystal growth. in Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Elsevier, Amsterdam, S. 37-38, 3rd International Workshop on Modeling in Crystal Growth, New York, 18 Okt. 2000.
Madzulis, I., Muiznieks, A., Mühlbauer, A., & Raming, G. (2001). Influence of the crystal orientation on the microscopic crystallization instabilities during FZ silicon crystal growth. In Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000 (S. 37-38). Elsevier.
Madzulis I, Muiznieks A, Mühlbauer A, Raming G. Influence of the crystal orientation on the microscopic crystallization instabilities during FZ silicon crystal growth. in Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier. 2001. S. 37-38
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title = "Influence of the crystal orientation on the microscopic crystallization instabilities during FZ silicon crystal growth",
author = "I. Madzulis and Andris Muiznieks and Alfred M{\"u}hlbauer and Georg Raming",
year = "2001",
language = "English",
pages = "37--38",
booktitle = "Modeling in crystal growth",
publisher = "Elsevier",
address = "Netherlands",
note = "3rd International Workshop on Modeling in Crystal Growth ; Conference date: 18-10-2000 Through 19-10-2000",
}
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TY - GEN
T1 - Influence of the crystal orientation on the microscopic crystallization instabilities during FZ silicon crystal growth
AU - Madzulis, I.
AU - Muiznieks, Andris
AU - Mühlbauer, Alfred
AU - Raming, Georg
N1 - Conference code: 3
PY - 2001
Y1 - 2001
M3 - Conference contribution
SP - 37
EP - 38
BT - Modeling in crystal growth
PB - Elsevier
CY - Amsterdam
T2 - 3rd International Workshop on Modeling in Crystal Growth
Y2 - 18 October 2000 through 19 October 2000
ER -