Influence of scattering processes on the electronic properties of composite fermions

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

Externe Organisationen

  • Max-Planck-Institut für Festkörperforschung
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)99-101
Seitenumfang3
FachzeitschriftSurface science
Jahrgang361-362
PublikationsstatusVeröffentlicht - 20 Juli 1996
Extern publiziertJa

Abstract

Sweeping the magnetic field at low temperatures can result in metastable states of the system of two-dimensional electrons in GaAs/AlGaAs. These non-equilibrium states are stable in the range of filling factors 1/3<ν<1, but can be changed by an extremely small variation of magnetic field around ν=1. We used this phenomenon to vary the disorder and to study its influence on the electronic properties of two-dimensional electrons in the vicinity of ν=1/2. The temperature dependence of σxx at ν=1/2 was analyzed, and logarithmic corrections to conductivity were found.

ASJC Scopus Sachgebiete

Zitieren

Influence of scattering processes on the electronic properties of composite fermions. / Kukushkin, I. V.; Haug, R. J.; Von Klitzing, K. et al.
in: Surface science, Jahrgang 361-362, 20.07.1996, S. 99-101.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Kukushkin IV, Haug RJ, Von Klitzing K, Eberl K. Influence of scattering processes on the electronic properties of composite fermions. Surface science. 1996 Jul 20;361-362:99-101. doi: 10.1016/0039-6028(96)00340-8
Kukushkin, I. V. ; Haug, R. J. ; Von Klitzing, K. et al. / Influence of scattering processes on the electronic properties of composite fermions. in: Surface science. 1996 ; Jahrgang 361-362. S. 99-101.
Download
@article{d0bcb70e18b14f86a931eb4904f8d89a,
title = "Influence of scattering processes on the electronic properties of composite fermions",
abstract = "Sweeping the magnetic field at low temperatures can result in metastable states of the system of two-dimensional electrons in GaAs/AlGaAs. These non-equilibrium states are stable in the range of filling factors 1/3<ν<1, but can be changed by an extremely small variation of magnetic field around ν=1. We used this phenomenon to vary the disorder and to study its influence on the electronic properties of two-dimensional electrons in the vicinity of ν=1/2. The temperature dependence of σxx at ν=1/2 was analyzed, and logarithmic corrections to conductivity were found.",
keywords = "Conductivity, Gallium arsenide, Heterojunctions, Magnetic phenomena, Many body and quasi-particle theories, Molecular beam epitaxy, Semiconductor-semiconductor heterostructures",
author = "Kukushkin, {I. V.} and Haug, {R. J.} and {Von Klitzing}, K. and K. Eberl",
year = "1996",
month = jul,
day = "20",
doi = "10.1016/0039-6028(96)00340-8",
language = "English",
volume = "361-362",
pages = "99--101",
journal = "Surface science",
issn = "0039-6028",
publisher = "Elsevier",

}

Download

TY - JOUR

T1 - Influence of scattering processes on the electronic properties of composite fermions

AU - Kukushkin, I. V.

AU - Haug, R. J.

AU - Von Klitzing, K.

AU - Eberl, K.

PY - 1996/7/20

Y1 - 1996/7/20

N2 - Sweeping the magnetic field at low temperatures can result in metastable states of the system of two-dimensional electrons in GaAs/AlGaAs. These non-equilibrium states are stable in the range of filling factors 1/3<ν<1, but can be changed by an extremely small variation of magnetic field around ν=1. We used this phenomenon to vary the disorder and to study its influence on the electronic properties of two-dimensional electrons in the vicinity of ν=1/2. The temperature dependence of σxx at ν=1/2 was analyzed, and logarithmic corrections to conductivity were found.

AB - Sweeping the magnetic field at low temperatures can result in metastable states of the system of two-dimensional electrons in GaAs/AlGaAs. These non-equilibrium states are stable in the range of filling factors 1/3<ν<1, but can be changed by an extremely small variation of magnetic field around ν=1. We used this phenomenon to vary the disorder and to study its influence on the electronic properties of two-dimensional electrons in the vicinity of ν=1/2. The temperature dependence of σxx at ν=1/2 was analyzed, and logarithmic corrections to conductivity were found.

KW - Conductivity

KW - Gallium arsenide

KW - Heterojunctions

KW - Magnetic phenomena

KW - Many body and quasi-particle theories

KW - Molecular beam epitaxy

KW - Semiconductor-semiconductor heterostructures

UR - http://www.scopus.com/inward/record.url?scp=0030189510&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(96)00340-8

DO - 10.1016/0039-6028(96)00340-8

M3 - Article

AN - SCOPUS:0030189510

VL - 361-362

SP - 99

EP - 101

JO - Surface science

JF - Surface science

SN - 0039-6028

ER -

Von denselben Autoren