Influence of Operation- and Program-States on the Breakdown Effects of Electronics by Impact of EMP and UWB

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Autoren

  • Michael Camp
  • Heyno Garbe
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Details

OriginalspracheEnglisch
Titel des Sammelwerks2003 IEEE International Symposium on Electromagnetic Compatibility
UntertitelEMC ´03
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers Inc.
Seiten1032-1035
Seitenumfang4
ISBN (elektronisch)0780377796
PublikationsstatusVeröffentlicht - 2003
Veranstaltung2003 IEEE International Symposium on Electromagnetic Compatibility, EMC 2003 - Istanbul, Türkei
Dauer: 11 Mai 200316 Mai 2003

Publikationsreihe

NameIEEE International Symposium on Electromagnetic Compatibility
Band2
ISSN (Print)1077-4076
ISSN (elektronisch)2158-1118

Abstract

This paper deals with the influence of different operation-and program-states on the breakdown effects of electronics by impact of EMP and UWB pulses. Different electronic devices like shift registers, microcontrollers and personal computers were exposed to high amplitude transient pulses.

ASJC Scopus Sachgebiete

Zitieren

Influence of Operation- and Program-States on the Breakdown Effects of Electronics by Impact of EMP and UWB. / Camp, Michael; Garbe, Heyno.
2003 IEEE International Symposium on Electromagnetic Compatibility: EMC ´03. Institute of Electrical and Electronics Engineers Inc., 2003. S. 1032-1035 1429090 (IEEE International Symposium on Electromagnetic Compatibility; Band 2).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Camp, M & Garbe, H 2003, Influence of Operation- and Program-States on the Breakdown Effects of Electronics by Impact of EMP and UWB. in 2003 IEEE International Symposium on Electromagnetic Compatibility: EMC ´03., 1429090, IEEE International Symposium on Electromagnetic Compatibility, Bd. 2, Institute of Electrical and Electronics Engineers Inc., S. 1032-1035, 2003 IEEE International Symposium on Electromagnetic Compatibility, EMC 2003, Istanbul, Türkei, 11 Mai 2003. https://doi.org/10.1109/ICSMC2.2003.1429090
Camp, M., & Garbe, H. (2003). Influence of Operation- and Program-States on the Breakdown Effects of Electronics by Impact of EMP and UWB. In 2003 IEEE International Symposium on Electromagnetic Compatibility: EMC ´03 (S. 1032-1035). Artikel 1429090 (IEEE International Symposium on Electromagnetic Compatibility; Band 2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSMC2.2003.1429090
Camp M, Garbe H. Influence of Operation- and Program-States on the Breakdown Effects of Electronics by Impact of EMP and UWB. in 2003 IEEE International Symposium on Electromagnetic Compatibility: EMC ´03. Institute of Electrical and Electronics Engineers Inc. 2003. S. 1032-1035. 1429090. (IEEE International Symposium on Electromagnetic Compatibility). doi: 10.1109/ICSMC2.2003.1429090
Camp, Michael ; Garbe, Heyno. / Influence of Operation- and Program-States on the Breakdown Effects of Electronics by Impact of EMP and UWB. 2003 IEEE International Symposium on Electromagnetic Compatibility: EMC ´03. Institute of Electrical and Electronics Engineers Inc., 2003. S. 1032-1035 (IEEE International Symposium on Electromagnetic Compatibility).
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