Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 014 |
| Seiten (von - bis) | 82-85 |
| Seitenumfang | 4 |
| Fachzeitschrift | Semiconductor Science and Technology |
| Jahrgang | 7 |
| Ausgabenummer | 1 |
| Publikationsstatus | Veröffentlicht - 1 Dez. 1992 |
| Extern publiziert | Ja |
Abstract
The longitudinal magnetoresistance of a two-dimensional electron gas is shown to be strongly dependent on the presence of ohmic contacts between the voltage probes. By connecting or disconnecting contacts with additional gates across the potential probes it is possible to drastically change the amplitude of Shubnikov-de Haas oscillations.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Semiconductor Science and Technology, Jahrgang 7, Nr. 1, 014, 01.12.1992, S. 82-85.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Influence of ohmic contacts on the amplitude of Shubnikov-de Haas oscillations
AU - Von Klitzing, K.
AU - Nieder, J.
AU - Haug, R. J.
AU - Muller, G.
AU - Koch, S.
AU - Weiss, D.
AU - Ploog, K.
PY - 1992/12/1
Y1 - 1992/12/1
N2 - The longitudinal magnetoresistance of a two-dimensional electron gas is shown to be strongly dependent on the presence of ohmic contacts between the voltage probes. By connecting or disconnecting contacts with additional gates across the potential probes it is possible to drastically change the amplitude of Shubnikov-de Haas oscillations.
AB - The longitudinal magnetoresistance of a two-dimensional electron gas is shown to be strongly dependent on the presence of ohmic contacts between the voltage probes. By connecting or disconnecting contacts with additional gates across the potential probes it is possible to drastically change the amplitude of Shubnikov-de Haas oscillations.
UR - http://www.scopus.com/inward/record.url?scp=0026626779&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/7/1/014
DO - 10.1088/0268-1242/7/1/014
M3 - Article
AN - SCOPUS:0026626779
VL - 7
SP - 82
EP - 85
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 1
M1 - 014
ER -