Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 18045-18048 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physical Review B |
| Jahrgang | 51 |
| Ausgabenummer | 24 |
| Publikationsstatus | Veröffentlicht - 1 Jan. 1995 |
| Extern publiziert | Ja |
Abstract
Sweeping the magnetic field at low temperatures can result in metastable states of the system of two-dimensional electrons in GaAs/AlxGa1-xAs. These nonequilibrium states are stable in the range of filling factors 1/3<ν<1, but can be changed by an extremely small variation of magnetic field around ν1, which is accompanied by a drastic change in magnetoresistivity. We used this phenomenon to vary the disorder and to study its influence on the electronic properties of two-dimensional electrons in the regime of the fractional quantum Hall effect and, especially, in the vicinity of ν=1/2.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physical Review B, Jahrgang 51, Nr. 24, 01.01.1995, S. 18045-18048.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Influence of metastable states of two-dimensional electrons on the electronic properties of composite fermions
AU - Kukushkin, I. V.
AU - Haug, R. J.
AU - Von Klitzing, K.
AU - Eberl, K.
PY - 1995/1/1
Y1 - 1995/1/1
N2 - Sweeping the magnetic field at low temperatures can result in metastable states of the system of two-dimensional electrons in GaAs/AlxGa1-xAs. These nonequilibrium states are stable in the range of filling factors 1/3<ν<1, but can be changed by an extremely small variation of magnetic field around ν1, which is accompanied by a drastic change in magnetoresistivity. We used this phenomenon to vary the disorder and to study its influence on the electronic properties of two-dimensional electrons in the regime of the fractional quantum Hall effect and, especially, in the vicinity of ν=1/2.
AB - Sweeping the magnetic field at low temperatures can result in metastable states of the system of two-dimensional electrons in GaAs/AlxGa1-xAs. These nonequilibrium states are stable in the range of filling factors 1/3<ν<1, but can be changed by an extremely small variation of magnetic field around ν1, which is accompanied by a drastic change in magnetoresistivity. We used this phenomenon to vary the disorder and to study its influence on the electronic properties of two-dimensional electrons in the regime of the fractional quantum Hall effect and, especially, in the vicinity of ν=1/2.
UR - http://www.scopus.com/inward/record.url?scp=0041706602&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.51.18045
DO - 10.1103/PhysRevB.51.18045
M3 - Article
AN - SCOPUS:0041706602
VL - 51
SP - 18045
EP - 18048
JO - Physical Review B
JF - Physical Review B
SN - 0163-1829
IS - 24
ER -