Influence of high-permittivity barriers on PD activity in three-layer dielectrics

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • S. M. Lebedev
  • O. S. Gefle
  • Y. P. Pokholkov
  • E. Gockenbach
  • H. Borsi
  • V. Wasserberg
  • N. Abedi
  • J. Szczechowski

Externe Organisationen

  • Tomsk Polytechnic University
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)3155-3159
Seitenumfang5
FachzeitschriftJournal of Physics D: Applied Physics
Jahrgang37
Ausgabenummer22
Frühes Online-Datum28 Okt. 2004
PublikationsstatusVeröffentlicht - 21 Nov. 2004

Abstract

It is a well-known fact that the breakdown voltage of dielectrics in a divergent field may be increased by using an additional insulating layer (a barrier) placed at the optimal position between the electrodes. This paper is devoted to the investigation of the barrier effect in solid dielectrics in a quasi-uniform electric field, i.e. the study of the relationship between partial discharge (PD) activity and the barrier position in the insulating gap. It is established that the PD parameters depend on the barrier position in the gap. In particular, the ignition voltage of critical PDs is increased by more than 50% at the optimal barrier position compared to that for other barrier positions.

ASJC Scopus Sachgebiete

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Influence of high-permittivity barriers on PD activity in three-layer dielectrics. / Lebedev, S. M.; Gefle, O. S.; Pokholkov, Y. P. et al.
in: Journal of Physics D: Applied Physics, Jahrgang 37, Nr. 22, 21.11.2004, S. 3155-3159.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Lebedev, SM, Gefle, OS, Pokholkov, YP, Gockenbach, E, Borsi, H, Wasserberg, V, Abedi, N & Szczechowski, J 2004, 'Influence of high-permittivity barriers on PD activity in three-layer dielectrics', Journal of Physics D: Applied Physics, Jg. 37, Nr. 22, S. 3155-3159. https://doi.org/10.1088/0022-3727/37/22/016
Lebedev, S. M., Gefle, O. S., Pokholkov, Y. P., Gockenbach, E., Borsi, H., Wasserberg, V., Abedi, N., & Szczechowski, J. (2004). Influence of high-permittivity barriers on PD activity in three-layer dielectrics. Journal of Physics D: Applied Physics, 37(22), 3155-3159. https://doi.org/10.1088/0022-3727/37/22/016
Lebedev SM, Gefle OS, Pokholkov YP, Gockenbach E, Borsi H, Wasserberg V et al. Influence of high-permittivity barriers on PD activity in three-layer dielectrics. Journal of Physics D: Applied Physics. 2004 Nov 21;37(22):3155-3159. Epub 2004 Okt 28. doi: 10.1088/0022-3727/37/22/016
Lebedev, S. M. ; Gefle, O. S. ; Pokholkov, Y. P. et al. / Influence of high-permittivity barriers on PD activity in three-layer dielectrics. in: Journal of Physics D: Applied Physics. 2004 ; Jahrgang 37, Nr. 22. S. 3155-3159.
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