Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 35th IEEE Photovoltaic Specialists Conference Honolulu, HI, June 20-25, 2010 |
| Untertitel | Conference Proceedings |
| Seiten | 359-363 |
| Seitenumfang | 5 |
| Publikationsstatus | Veröffentlicht - 2010 |
| Veranstaltung | 35th IEEE Photovoltaic Specialists Conference: PVSC 2010 - Honolulu, HI, USA / Vereinigte Staaten Dauer: 20 Juni 2010 → 25 Juni 2010 Konferenznummer: 35 |
Publikationsreihe
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
We present emitter saturation current densities (J0E) of different types of BBr3 furnace-diffused boron emitters for a range of different sheet resistances on planar an textured surfaces: (a) "oxidized" emitters with an extended drive-in phase under oxygen and (b) "industrial" emitters without such additional drive-in step. Upon passivation with amorphous silicon - silicon nitride (a-Si/SiNX) stacks on planar surfaces we measure the J0E as a function of annealing time at 500 and 600°C respectively. The oxidized boron emitters show thermal stability up to 600°C with a stable J0E of 13 ± 2 fA/cm2 for 90 Ω/□. This is comparable to p+ emitter performance after passivation by ALD-deposited Al2O 3. The "industrial type" 90 Ω/□ emitter shows a J0E of 47 ± 5 fA/cm2 after annealing at 600°C due to a higher boron surface concentration and enhanced recombination within the emitter volume. Our a-Si/SiNX passivated emitters on textured surfaces exhibit about 50% higher J0E values than emitters on planar surfaces, which corresponds well with the increased area of the KOH-textured wafers.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Wirtschaftsingenieurwesen und Fertigungstechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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35th IEEE Photovoltaic Specialists Conference Honolulu, HI, June 20-25, 2010: Conference Proceedings. 2010. S. 359-363 5616868 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Influence of emitter profile characteristics on thermal stability and passiviation quality of A-Si/SiNX-passivated boron emitters
AU - Kessler, M.
AU - Gatz, S.
AU - Altermatt, P.
AU - Harder, N. P.
AU - Brendel, Rolf
N1 - Conference code: 35
PY - 2010
Y1 - 2010
N2 - We present emitter saturation current densities (J0E) of different types of BBr3 furnace-diffused boron emitters for a range of different sheet resistances on planar an textured surfaces: (a) "oxidized" emitters with an extended drive-in phase under oxygen and (b) "industrial" emitters without such additional drive-in step. Upon passivation with amorphous silicon - silicon nitride (a-Si/SiNX) stacks on planar surfaces we measure the J0E as a function of annealing time at 500 and 600°C respectively. The oxidized boron emitters show thermal stability up to 600°C with a stable J0E of 13 ± 2 fA/cm2 for 90 Ω/□. This is comparable to p+ emitter performance after passivation by ALD-deposited Al2O 3. The "industrial type" 90 Ω/□ emitter shows a J0E of 47 ± 5 fA/cm2 after annealing at 600°C due to a higher boron surface concentration and enhanced recombination within the emitter volume. Our a-Si/SiNX passivated emitters on textured surfaces exhibit about 50% higher J0E values than emitters on planar surfaces, which corresponds well with the increased area of the KOH-textured wafers.
AB - We present emitter saturation current densities (J0E) of different types of BBr3 furnace-diffused boron emitters for a range of different sheet resistances on planar an textured surfaces: (a) "oxidized" emitters with an extended drive-in phase under oxygen and (b) "industrial" emitters without such additional drive-in step. Upon passivation with amorphous silicon - silicon nitride (a-Si/SiNX) stacks on planar surfaces we measure the J0E as a function of annealing time at 500 and 600°C respectively. The oxidized boron emitters show thermal stability up to 600°C with a stable J0E of 13 ± 2 fA/cm2 for 90 Ω/□. This is comparable to p+ emitter performance after passivation by ALD-deposited Al2O 3. The "industrial type" 90 Ω/□ emitter shows a J0E of 47 ± 5 fA/cm2 after annealing at 600°C due to a higher boron surface concentration and enhanced recombination within the emitter volume. Our a-Si/SiNX passivated emitters on textured surfaces exhibit about 50% higher J0E values than emitters on planar surfaces, which corresponds well with the increased area of the KOH-textured wafers.
UR - http://www.scopus.com/inward/record.url?scp=78650146154&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2010.5616868
DO - 10.1109/PVSC.2010.5616868
M3 - Conference contribution
AN - SCOPUS:78650146154
SN - 9781424458912
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 359
EP - 363
BT - 35th IEEE Photovoltaic Specialists Conference Honolulu, HI, June 20-25, 2010
T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Y2 - 20 June 2010 through 25 June 2010
ER -