Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 548-551 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physica Status Solidi (B) Basic Research |
| Jahrgang | 204 |
| Ausgabenummer | 1 |
| Publikationsstatus | Veröffentlicht - Nov. 1997 |
| Extern publiziert | Ja |
Abstract
We investigate the influence of carrier relaxation on the emission dynamics of a semiconductor microcavity laser. The structure is optically excited with energies of 1.477 down to 1.346 eV (resonant excitation). The stimulated emission dynamics clearly becomes faster for decreasing excitation energy and the influence of the light hole on the emission dynamics is demonstrated. Theoretical calculations reproduce the results only if the nonequilibrium carrier dynamics is treated on the basis of a microscopic model.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi (B) Basic Research, Jahrgang 204, Nr. 1, 11.1997, S. 548-551.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Influence of carrier cooling on the emission dynamics of semiconductor microcavity lasers
AU - Hilpert, M.
AU - Hofmann, Martin R.
AU - Ellmers, C.
AU - Oestreich, Michael
AU - Schneider, H. C.
AU - Jahnke, F.
AU - Koch, Stephan W.
AU - Rühle, W. W.
AU - Wolf, H. D.
AU - Bernklau, D.
AU - Riechert, H.
AU - Klann, H.
PY - 1997/11
Y1 - 1997/11
N2 - We investigate the influence of carrier relaxation on the emission dynamics of a semiconductor microcavity laser. The structure is optically excited with energies of 1.477 down to 1.346 eV (resonant excitation). The stimulated emission dynamics clearly becomes faster for decreasing excitation energy and the influence of the light hole on the emission dynamics is demonstrated. Theoretical calculations reproduce the results only if the nonequilibrium carrier dynamics is treated on the basis of a microscopic model.
AB - We investigate the influence of carrier relaxation on the emission dynamics of a semiconductor microcavity laser. The structure is optically excited with energies of 1.477 down to 1.346 eV (resonant excitation). The stimulated emission dynamics clearly becomes faster for decreasing excitation energy and the influence of the light hole on the emission dynamics is demonstrated. Theoretical calculations reproduce the results only if the nonequilibrium carrier dynamics is treated on the basis of a microscopic model.
UR - http://www.scopus.com/inward/record.url?scp=0031499548&partnerID=8YFLogxK
U2 - 10.1002/1521-3951(199711)204:1<548::AID-PSSB548>3.0.CO;2-B
DO - 10.1002/1521-3951(199711)204:1<548::AID-PSSB548>3.0.CO;2-B
M3 - Article
AN - SCOPUS:0031499548
VL - 204
SP - 548
EP - 551
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
SN - 0370-1972
IS - 1
ER -