Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 477-481 |
| Seitenumfang | 5 |
| Fachzeitschrift | Surface science |
| Jahrgang | 603 |
| Ausgabenummer | 3 |
| Publikationsstatus | Veröffentlicht - 1 Feb. 2009 |
Abstract
The influence of boron as a function of coverage on molecular beam epitaxial Si growth on Si(1 1 1) surface was systematically studied by reflection high-energy electron diffraction. At boron coverage above 0.3 monolayer regular oscillations occur with a period typically for two-bilayers, whereas at lower boron coverage a transient behaviour with irregular intensity oscillations was observed in the initial growth stages. This behaviour can be attributed to a superposition of a bilayer and a two-bilayer dominated growth mode. The appearance of these two growth modes is discussed in terms of an initial surface defect-induced nucleation of bilayer-high Si islands and the formation of two-bilayers-high Si islands on top of the van der Waals like boron-covered surface, respectively. We suggest that these surface defects are of intrinsic nature, and their number only depends on the amount of boron at the surface. The oscillations become regular during further Si deposition with a bilayer period, indicating a diminishing influence of the layer/substrate interface on the growth processes.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Physik und Astronomie (insg.)
- Oberflächen und Grenzflächen
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Surface science, Jahrgang 603, Nr. 3, 01.02.2009, S. 477-481.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Influence of boron on the initial stages of Si molecular beam epitaxy on Si(1 1 1) studied by reflection high-energy electron diffraction
AU - Fissel, Andreas
AU - Krügener, Jan
AU - Osten, Hans Jörg
N1 - Funding information: The authors would like to acknowledge the partial support of the work by the Deutsche Forschungsgemeinschaft (DFG Project FI 726/3-1).
PY - 2009/2/1
Y1 - 2009/2/1
N2 - The influence of boron as a function of coverage on molecular beam epitaxial Si growth on Si(1 1 1) surface was systematically studied by reflection high-energy electron diffraction. At boron coverage above 0.3 monolayer regular oscillations occur with a period typically for two-bilayers, whereas at lower boron coverage a transient behaviour with irregular intensity oscillations was observed in the initial growth stages. This behaviour can be attributed to a superposition of a bilayer and a two-bilayer dominated growth mode. The appearance of these two growth modes is discussed in terms of an initial surface defect-induced nucleation of bilayer-high Si islands and the formation of two-bilayers-high Si islands on top of the van der Waals like boron-covered surface, respectively. We suggest that these surface defects are of intrinsic nature, and their number only depends on the amount of boron at the surface. The oscillations become regular during further Si deposition with a bilayer period, indicating a diminishing influence of the layer/substrate interface on the growth processes.
AB - The influence of boron as a function of coverage on molecular beam epitaxial Si growth on Si(1 1 1) surface was systematically studied by reflection high-energy electron diffraction. At boron coverage above 0.3 monolayer regular oscillations occur with a period typically for two-bilayers, whereas at lower boron coverage a transient behaviour with irregular intensity oscillations was observed in the initial growth stages. This behaviour can be attributed to a superposition of a bilayer and a two-bilayer dominated growth mode. The appearance of these two growth modes is discussed in terms of an initial surface defect-induced nucleation of bilayer-high Si islands and the formation of two-bilayers-high Si islands on top of the van der Waals like boron-covered surface, respectively. We suggest that these surface defects are of intrinsic nature, and their number only depends on the amount of boron at the surface. The oscillations become regular during further Si deposition with a bilayer period, indicating a diminishing influence of the layer/substrate interface on the growth processes.
KW - Boron
KW - Molecular beam epitaxy
KW - Reflection high-energy electron diffraction
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=58749089442&partnerID=8YFLogxK
U2 - 10.1016/j.susc.2008.12.004
DO - 10.1016/j.susc.2008.12.004
M3 - Article
AN - SCOPUS:58749089442
VL - 603
SP - 477
EP - 481
JO - Surface science
JF - Surface science
SN - 0039-6028
IS - 3
ER -