Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1587-1591 |
| Seitenumfang | 5 |
| Fachzeitschrift | Microelectronics reliability |
| Jahrgang | 51 |
| Ausgabenummer | 9-11 |
| Publikationsstatus | Veröffentlicht - Sept. 2011 |
Abstract
Shrinking the IC dimensions the dielectric insulation between metal interconnects has become one of the major limits on increasing circuit speed. A lot of possible new low-k materials failed to meet specifications: too leaky, too soft, too unstable, and too expensive. Due to this air gaps beside the metallization are one solution. The reliability of ULSI multilevel copper metallizations under electro- and stress migration stress test conditions is investigated here with finite element analysis. A determination of the electrical and mechanical stress in a 3D copper metallization model based on the 45 nm technology node is carried out and the impact of a variation of the applied current density as well as geometrical parameters on the thermal-electrical and mechanical behavior is investigated. For a determination of the reliability the mass flux and mass flux divergence are separately calculated by a user routine. The influence of air gaps on single via structures and structures with a chain of four vias on the thermal-electrical-mechanical behavior is determined.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Ingenieurwesen (insg.)
- Sicherheit, Risiko, Zuverlässigkeit und Qualität
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Microelectronics reliability, Jahrgang 51, Nr. 9-11, 09.2011, S. 1587-1591.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Influence of air gaps on the thermal-electrical-mechanical behavior of a copper metallization
AU - Bauer, Irina
AU - Weide-Zaage, Kirsten
AU - Meinshausen, Lutz
N1 - Copyright: Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011/9
Y1 - 2011/9
N2 - Shrinking the IC dimensions the dielectric insulation between metal interconnects has become one of the major limits on increasing circuit speed. A lot of possible new low-k materials failed to meet specifications: too leaky, too soft, too unstable, and too expensive. Due to this air gaps beside the metallization are one solution. The reliability of ULSI multilevel copper metallizations under electro- and stress migration stress test conditions is investigated here with finite element analysis. A determination of the electrical and mechanical stress in a 3D copper metallization model based on the 45 nm technology node is carried out and the impact of a variation of the applied current density as well as geometrical parameters on the thermal-electrical and mechanical behavior is investigated. For a determination of the reliability the mass flux and mass flux divergence are separately calculated by a user routine. The influence of air gaps on single via structures and structures with a chain of four vias on the thermal-electrical-mechanical behavior is determined.
AB - Shrinking the IC dimensions the dielectric insulation between metal interconnects has become one of the major limits on increasing circuit speed. A lot of possible new low-k materials failed to meet specifications: too leaky, too soft, too unstable, and too expensive. Due to this air gaps beside the metallization are one solution. The reliability of ULSI multilevel copper metallizations under electro- and stress migration stress test conditions is investigated here with finite element analysis. A determination of the electrical and mechanical stress in a 3D copper metallization model based on the 45 nm technology node is carried out and the impact of a variation of the applied current density as well as geometrical parameters on the thermal-electrical and mechanical behavior is investigated. For a determination of the reliability the mass flux and mass flux divergence are separately calculated by a user routine. The influence of air gaps on single via structures and structures with a chain of four vias on the thermal-electrical-mechanical behavior is determined.
UR - http://www.scopus.com/inward/record.url?scp=80052939126&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2011.07.011
DO - 10.1016/j.microrel.2011.07.011
M3 - Article
AN - SCOPUS:80052939126
VL - 51
SP - 1587
EP - 1591
JO - Microelectronics reliability
JF - Microelectronics reliability
SN - 0026-2714
IS - 9-11
ER -