Independent tuning of excitonic emission energy and decay time in single semiconductor quantum dots

B. Höfer; J. Zhang; J. Wildmann; E. Zallo; R. Trotta; F. Ding; A. Rastelli; O. G. Schmidt

doi:10.1063/1.4979481

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Originalsprache	Englisch
Aufsatznummer	151102
Fachzeitschrift	Applied physics letters
Jahrgang	110
Ausgabenummer	15
Publikationsstatus	Veröffentlicht - 10 Apr. 2017

ASJC Scopus Sachgebiete

Physik und Astronomie (insg.)
Physik und Astronomie (sonstige)

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Independent tuning of excitonic emission energy and decay time in single semiconductor quantum dots. / Höfer, B.; Zhang, J.; Wildmann, J. et al.
in: Applied physics letters, Jahrgang 110, Nr. 15, 151102, 10.04.2017.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Höfer, B, Zhang, J, Wildmann, J, Zallo, E, Trotta, R, Ding, F, Rastelli, A & Schmidt, OG 2017, 'Independent tuning of excitonic emission energy and decay time in single semiconductor quantum dots', Applied physics letters, Jg. 110, Nr. 15, 151102. https://doi.org/10.1063/1.4979481

Höfer, B., Zhang, J., Wildmann, J., Zallo, E., Trotta, R., Ding, F., Rastelli, A., & Schmidt, O. G. (2017). Independent tuning of excitonic emission energy and decay time in single semiconductor quantum dots. Applied physics letters, 110(15), Artikel 151102. https://doi.org/10.1063/1.4979481

Höfer B, Zhang J, Wildmann J, Zallo E, Trotta R, Ding F et al. Independent tuning of excitonic emission energy and decay time in single semiconductor quantum dots. Applied physics letters. 2017 Apr 10;110(15):151102. doi: 10.1063/1.4979481

Höfer, B. ; Zhang, J. ; Wildmann, J. et al. / Independent tuning of excitonic emission energy and decay time in single semiconductor quantum dots. in: Applied physics letters. 2017 ; Jahrgang 110, Nr. 15.

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title = "Independent tuning of excitonic emission energy and decay time in single semiconductor quantum dots",

author = "B. H{\"o}fer and J. Zhang and J. Wildmann and E. Zallo and R. Trotta and F. Ding and A. Rastelli and Schmidt, {O. G.}",

note = "Funding information: The work was financially supported by the BMBF QuaHL-Rep (Contract Nos. 01BQ1032 and 01BQ1034) and Q.Com-H (16KIS0106), ERC starting grant “QD-NOMS” with No. 715770, as well as the European Union Seventh Framework Program 209 (FP7/2007-2013) under Grant Agreement No. 601126 210 (HANAS). The authors thank B. Eichler, R. Engelhard, and S. Harazim for the technical support on the device fabrication.",

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T1 - Independent tuning of excitonic emission energy and decay time in single semiconductor quantum dots

AU - Höfer, B.

AU - Zhang, J.

AU - Wildmann, J.

AU - Zallo, E.

AU - Trotta, R.

AU - Ding, F.

AU - Rastelli, A.

AU - Schmidt, O. G.

N1 - Funding information: The work was financially supported by the BMBF QuaHL-Rep (Contract Nos. 01BQ1032 and 01BQ1034) and Q.Com-H (16KIS0106), ERC starting grant “QD-NOMS” with No. 715770, as well as the European Union Seventh Framework Program 209 (FP7/2007-2013) under Grant Agreement No. 601126 210 (HANAS). The authors thank B. Eichler, R. Engelhard, and S. Harazim for the technical support on the device fabrication.

PY - 2017/4/10

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U2 - 10.1063/1.4979481

DO - 10.1063/1.4979481

M3 - Article

AN - SCOPUS:85017307974

VL - 110

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

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M1 - 151102

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Independent tuning of excitonic emission energy and decay time in single semiconductor quantum dots

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