Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics |
| Publikationsstatus | Veröffentlicht - 10 Aug. 2018 |
| Veranstaltung | SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics - Lausanne, Schweiz Dauer: 19 März 2018 → 21 März 2018 |
Publikationsreihe
| Name | AIP Conference Proceedings |
|---|---|
| Band | 1999 |
| ISSN (Print) | 0094-243X |
| ISSN (elektronisch) | 1551-7616 |
Abstract
This paper investigates the reduction of the parasitic absorption in solar cells with poly-silicon based passivating contacts. We analyze the transparency of poly-Si films fabricated at various deposition temperatures. We observe different surface morphologies by scanning electron microscopy and model their spectroscopic ellipsometry reflection data. Based on the measured optical parameters (n and k) we perform ray tracing simulations for quantifying the expected increase of short-circuit current density of a cell. Our study shows that the poly-Si deposition at 530°C leads to an increase of the photo-generated current density by up to 0.76 mA/cm2 when compared to poly-Si films deposited at 610°C.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics. 2018. 040015 (AIP Conference Proceedings; Band 1999).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Increasing the photo-generated current in solar cells with passivating contacts by reducing the poly-Si deposition temperature
AU - Min, Byungsul
AU - Vogt, Malte Ruben
AU - Wietler, Tobias
AU - Reineke-Koch, Rolf
AU - Wolpensinger, Bettina
AU - Köhnen, Eike
AU - Tetzlaff, Dominic
AU - Schinke, Carsten
AU - Brendel, Rolf
AU - Peibst, Robby
N1 - Funding Information: This work was supported by the European Union’s Horizon 2020 Programme for research, technological development and demonstration Grant Agreements no. 727529 (project DISC).
PY - 2018/8/10
Y1 - 2018/8/10
N2 - This paper investigates the reduction of the parasitic absorption in solar cells with poly-silicon based passivating contacts. We analyze the transparency of poly-Si films fabricated at various deposition temperatures. We observe different surface morphologies by scanning electron microscopy and model their spectroscopic ellipsometry reflection data. Based on the measured optical parameters (n and k) we perform ray tracing simulations for quantifying the expected increase of short-circuit current density of a cell. Our study shows that the poly-Si deposition at 530°C leads to an increase of the photo-generated current density by up to 0.76 mA/cm2 when compared to poly-Si films deposited at 610°C.
AB - This paper investigates the reduction of the parasitic absorption in solar cells with poly-silicon based passivating contacts. We analyze the transparency of poly-Si films fabricated at various deposition temperatures. We observe different surface morphologies by scanning electron microscopy and model their spectroscopic ellipsometry reflection data. Based on the measured optical parameters (n and k) we perform ray tracing simulations for quantifying the expected increase of short-circuit current density of a cell. Our study shows that the poly-Si deposition at 530°C leads to an increase of the photo-generated current density by up to 0.76 mA/cm2 when compared to poly-Si films deposited at 610°C.
UR - http://www.scopus.com/inward/record.url?scp=85051945448&partnerID=8YFLogxK
U2 - 10.1063/1.5049278
DO - 10.1063/1.5049278
M3 - Conference contribution
AN - SCOPUS:85051945448
SN - 9780735417151
T3 - AIP Conference Proceedings
BT - SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics
T2 - SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics
Y2 - 19 March 2018 through 21 March 2018
ER -