In Situ Waveform Measurements Within Doherty Power Amplifier Under Operational Conditions

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • Steffen Probst
  • Eckhard Denicke
  • Bernd Geck
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)2192-2200
Seitenumfang9
FachzeitschriftIEEE Transactions on Microwave Theory and Techniques
Jahrgang65
Ausgabenummer6
PublikationsstatusVeröffentlicht - Juni 2017

Abstract

In this contribution, a gallium nitride-based 1 GHz Doherty amplifier with in situ waveform measurement capability is presented. With this measurement approach, the high frequency time-domain voltages and currents can be measured directly within the circuit. Therefore, directional couplers are integrated into the output matching network of the carrier and the peak amplifier. In contrast to other measurement techniques for investigating amplifiers under laboratory conditions, with this approach, a more in-depth investigation of realized power amplifiers can be carried out under operational conditions, e.g., for tuning. Especially, it is possible to characterize the interaction of the carrier and the peak amplifier. Hence, to the best knowledge of the authors the load modulation of a Doherty amplifier at the fundamental and the higher harmonics is measured for the first time.

ASJC Scopus Sachgebiete

Zitieren

In Situ Waveform Measurements Within Doherty Power Amplifier Under Operational Conditions. / Probst, Steffen; Denicke, Eckhard; Geck, Bernd.
in: IEEE Transactions on Microwave Theory and Techniques, Jahrgang 65, Nr. 6, 06.2017, S. 2192-2200.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Probst, Steffen ; Denicke, Eckhard ; Geck, Bernd. / In Situ Waveform Measurements Within Doherty Power Amplifier Under Operational Conditions. in: IEEE Transactions on Microwave Theory and Techniques. 2017 ; Jahrgang 65, Nr. 6. S. 2192-2200.
Download
@article{192f04bc60a44c24974e84e59b6f4489,
title = "In Situ Waveform Measurements Within Doherty Power Amplifier Under Operational Conditions",
abstract = "In this contribution, a gallium nitride-based 1 GHz Doherty amplifier with in situ waveform measurement capability is presented. With this measurement approach, the high frequency time-domain voltages and currents can be measured directly within the circuit. Therefore, directional couplers are integrated into the output matching network of the carrier and the peak amplifier. In contrast to other measurement techniques for investigating amplifiers under laboratory conditions, with this approach, a more in-depth investigation of realized power amplifiers can be carried out under operational conditions, e.g., for tuning. Especially, it is possible to characterize the interaction of the carrier and the peak amplifier. Hence, to the best knowledge of the authors the load modulation of a Doherty amplifier at the fundamental and the higher harmonics is measured for the first time.",
keywords = "Doherty amplifier, high efficiency, in situ measurements, inverse class F, load modulation, nonlinear systems, power amplifier, time-domain measurements",
author = "Steffen Probst and Eckhard Denicke and Bernd Geck",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",
year = "2017",
month = jun,
doi = "10.1109/TMTT.2017.2651809",
language = "English",
volume = "65",
pages = "2192--2200",
journal = "IEEE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

Download

TY - JOUR

T1 - In Situ Waveform Measurements Within Doherty Power Amplifier Under Operational Conditions

AU - Probst, Steffen

AU - Denicke, Eckhard

AU - Geck, Bernd

N1 - Publisher Copyright: © 2017 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 2017/6

Y1 - 2017/6

N2 - In this contribution, a gallium nitride-based 1 GHz Doherty amplifier with in situ waveform measurement capability is presented. With this measurement approach, the high frequency time-domain voltages and currents can be measured directly within the circuit. Therefore, directional couplers are integrated into the output matching network of the carrier and the peak amplifier. In contrast to other measurement techniques for investigating amplifiers under laboratory conditions, with this approach, a more in-depth investigation of realized power amplifiers can be carried out under operational conditions, e.g., for tuning. Especially, it is possible to characterize the interaction of the carrier and the peak amplifier. Hence, to the best knowledge of the authors the load modulation of a Doherty amplifier at the fundamental and the higher harmonics is measured for the first time.

AB - In this contribution, a gallium nitride-based 1 GHz Doherty amplifier with in situ waveform measurement capability is presented. With this measurement approach, the high frequency time-domain voltages and currents can be measured directly within the circuit. Therefore, directional couplers are integrated into the output matching network of the carrier and the peak amplifier. In contrast to other measurement techniques for investigating amplifiers under laboratory conditions, with this approach, a more in-depth investigation of realized power amplifiers can be carried out under operational conditions, e.g., for tuning. Especially, it is possible to characterize the interaction of the carrier and the peak amplifier. Hence, to the best knowledge of the authors the load modulation of a Doherty amplifier at the fundamental and the higher harmonics is measured for the first time.

KW - Doherty amplifier

KW - high efficiency

KW - in situ measurements

KW - inverse class F

KW - load modulation

KW - nonlinear systems

KW - power amplifier

KW - time-domain measurements

UR - http://www.scopus.com/inward/record.url?scp=85011665491&partnerID=8YFLogxK

U2 - 10.1109/TMTT.2017.2651809

DO - 10.1109/TMTT.2017.2651809

M3 - Article

AN - SCOPUS:85011665491

VL - 65

SP - 2192

EP - 2200

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 6

ER -