Details
Originalsprache | Englisch |
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Titel des Sammelwerks | International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015 |
Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
ISBN (elektronisch) | 9781467364966 |
Publikationsstatus | Veröffentlicht - 16 Nov. 2015 |
Veranstaltung | International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015 - Taormina, Italien Dauer: 1 Okt. 2015 → 2 Okt. 2015 |
Publikationsreihe
Name | International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015 |
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Abstract
In this contribution a gallium nitride (GaN) based inverse class F (F-1) power amplifier with in situ waveform measurement capability is presented. Which the measurement approach the high frequency time domain voltages and currents in a reference plane can be measured directly in the circuit. Therefore, a directional coupler is integrated in the output matching network of the F-1 power amplifier. With this measurement results, a more in-depth investigation of the F-1 power amplifier can be carried out under operational conditions. Also it is a suitable approach for describing the non-linear behavior of RF circuits under operational conditions.
ASJC Scopus Sachgebiete
- Informatik (insg.)
- Hardware und Architektur
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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- BibTex
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International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7330360 (International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - In situ waveform measurement approach within an inverse class F GaN power amplifier
AU - Probst, Steffen
AU - Geck, Bernd
PY - 2015/11/16
Y1 - 2015/11/16
N2 - In this contribution a gallium nitride (GaN) based inverse class F (F-1) power amplifier with in situ waveform measurement capability is presented. Which the measurement approach the high frequency time domain voltages and currents in a reference plane can be measured directly in the circuit. Therefore, a directional coupler is integrated in the output matching network of the F-1 power amplifier. With this measurement results, a more in-depth investigation of the F-1 power amplifier can be carried out under operational conditions. Also it is a suitable approach for describing the non-linear behavior of RF circuits under operational conditions.
AB - In this contribution a gallium nitride (GaN) based inverse class F (F-1) power amplifier with in situ waveform measurement capability is presented. Which the measurement approach the high frequency time domain voltages and currents in a reference plane can be measured directly in the circuit. Therefore, a directional coupler is integrated in the output matching network of the F-1 power amplifier. With this measurement results, a more in-depth investigation of the F-1 power amplifier can be carried out under operational conditions. Also it is a suitable approach for describing the non-linear behavior of RF circuits under operational conditions.
KW - Efficiency
KW - inverse class F
KW - non-linear
KW - Power amplifiers
KW - time domain measurement
UR - http://www.scopus.com/inward/record.url?scp=84963522431&partnerID=8YFLogxK
U2 - 10.1109/INMMIC.2015.7330360
DO - 10.1109/INMMIC.2015.7330360
M3 - Conference contribution
AN - SCOPUS:84963522431
T3 - International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015
BT - International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, INMMiC 2015
Y2 - 1 October 2015 through 2 October 2015
ER -