Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 40-48 |
| Seitenumfang | 9 |
| Fachzeitschrift | Applied surface science |
| Jahrgang | 370 |
| Frühes Online-Datum | 18 Feb. 2016 |
| Publikationsstatus | Elektronisch veröffentlicht (E-Pub) - 18 Feb. 2016 |
Abstract
In this paper we investigate the initial stages of epitaxial growth of Ge on Si(1 1 1) and the impact of growth temperature on strain evolution in situ by reflection high energy electron diffraction (RHEED) for temperatures between 200 °C and 400 °C. The change in surface morphology from a flat wetting layer to subsequent islanding that is characteristic for Stranski-Krastanov growth is monitored by spot intensity analysis. The corresponding critical layer thickness is determined to 3.1 < d c < 3.4 ML. In situ monitoring of the strain relaxation process reveals a contribution of the Si(1 1 1) 7 × 7-surface reconstruction to the strain relaxation process. High resolution transmission electron microscopy confirms that the Ge islands exhibit a high degree of structural perfection and an ordered interfacial misfit dislocation network already at a growth temperature of 200 °C is established. The temperature dependency of island shape, density and height is characterized by atomic force microscopy and compared to the RHEED investigations.
ASJC Scopus Sachgebiete
- Chemie (insg.)
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Physik und Astronomie (insg.)
- Physik und Astronomie (insg.)
- Oberflächen und Grenzflächen
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
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in: Applied surface science, Jahrgang 370, 18.02.2016, S. 40-48.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - In situ observation of low temperature growth of Ge on Si(1 1 1) by reflection high energy electron diffraction
AU - Grimm, Andreas
AU - Fissel, Andreas
AU - Bugiel, Eberhard
AU - Wietler, Tobias F.
PY - 2016/2/18
Y1 - 2016/2/18
N2 - In this paper we investigate the initial stages of epitaxial growth of Ge on Si(1 1 1) and the impact of growth temperature on strain evolution in situ by reflection high energy electron diffraction (RHEED) for temperatures between 200 °C and 400 °C. The change in surface morphology from a flat wetting layer to subsequent islanding that is characteristic for Stranski-Krastanov growth is monitored by spot intensity analysis. The corresponding critical layer thickness is determined to 3.1 < d c < 3.4 ML. In situ monitoring of the strain relaxation process reveals a contribution of the Si(1 1 1) 7 × 7-surface reconstruction to the strain relaxation process. High resolution transmission electron microscopy confirms that the Ge islands exhibit a high degree of structural perfection and an ordered interfacial misfit dislocation network already at a growth temperature of 200 °C is established. The temperature dependency of island shape, density and height is characterized by atomic force microscopy and compared to the RHEED investigations.
AB - In this paper we investigate the initial stages of epitaxial growth of Ge on Si(1 1 1) and the impact of growth temperature on strain evolution in situ by reflection high energy electron diffraction (RHEED) for temperatures between 200 °C and 400 °C. The change in surface morphology from a flat wetting layer to subsequent islanding that is characteristic for Stranski-Krastanov growth is monitored by spot intensity analysis. The corresponding critical layer thickness is determined to 3.1 < d c < 3.4 ML. In situ monitoring of the strain relaxation process reveals a contribution of the Si(1 1 1) 7 × 7-surface reconstruction to the strain relaxation process. High resolution transmission electron microscopy confirms that the Ge islands exhibit a high degree of structural perfection and an ordered interfacial misfit dislocation network already at a growth temperature of 200 °C is established. The temperature dependency of island shape, density and height is characterized by atomic force microscopy and compared to the RHEED investigations.
KW - Germanium
KW - Growth mode
KW - Molecular beam epitaxy
KW - Reflection high energy electron diffraction
KW - Semiconductors
KW - Surface structure
UR - http://www.scopus.com/inward/record.url?scp=84959166724&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2016.02.144
DO - 10.1016/j.apsusc.2016.02.144
M3 - Article
AN - SCOPUS:84959166724
VL - 370
SP - 40
EP - 48
JO - Applied surface science
JF - Applied surface science
SN - 0169-4332
ER -