Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 476-478 |
| Seitenumfang | 3 |
| Fachzeitschrift | Journal of crystal growth |
| Jahrgang | 127 |
| Ausgabenummer | 1-4 |
| Publikationsstatus | Veröffentlicht - 2 Feb. 1993 |
| Extern publiziert | Ja |
Abstract
We describe an attempt to perform the UV/ozone cleaning step for silicon wafers within the ultrahigh vacuum system. By introducing the UV/ozone cleaning into the load lock of the MBE equipment we avoid the contact of the normally ex situ UV/ozone precleaned substrate to air. In addition we gain a further degree of freedom, namely the oxygen partial pressure. The influence of that pressure on removing carbon-containing contaminations and on the properties of the in situ formed thin oxide layer is investigated by X-ray photoelectron spectroscopy (XPS) without breaking the vacuum.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Chemie (insg.)
- Anorganische Chemie
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Journal of crystal growth, Jahrgang 127, Nr. 1-4, 02.02.1993, S. 476-478.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - In situ cleaning of Si surfaces by UV/ozone
AU - Lippert, G.
AU - Osten, H. J.
PY - 1993/2/2
Y1 - 1993/2/2
N2 - We describe an attempt to perform the UV/ozone cleaning step for silicon wafers within the ultrahigh vacuum system. By introducing the UV/ozone cleaning into the load lock of the MBE equipment we avoid the contact of the normally ex situ UV/ozone precleaned substrate to air. In addition we gain a further degree of freedom, namely the oxygen partial pressure. The influence of that pressure on removing carbon-containing contaminations and on the properties of the in situ formed thin oxide layer is investigated by X-ray photoelectron spectroscopy (XPS) without breaking the vacuum.
AB - We describe an attempt to perform the UV/ozone cleaning step for silicon wafers within the ultrahigh vacuum system. By introducing the UV/ozone cleaning into the load lock of the MBE equipment we avoid the contact of the normally ex situ UV/ozone precleaned substrate to air. In addition we gain a further degree of freedom, namely the oxygen partial pressure. The influence of that pressure on removing carbon-containing contaminations and on the properties of the in situ formed thin oxide layer is investigated by X-ray photoelectron spectroscopy (XPS) without breaking the vacuum.
UR - http://www.scopus.com/inward/record.url?scp=0027904571&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(93)90664-I
DO - 10.1016/0022-0248(93)90664-I
M3 - Article
AN - SCOPUS:0027904571
VL - 127
SP - 476
EP - 478
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 1-4
ER -