Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 524-258 |
| Seitenumfang | 267 |
| Fachzeitschrift | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Jahrgang | 18 |
| Ausgabenummer | 1 |
| Publikationsstatus | Veröffentlicht - 1 Jan. 2000 |
| Extern publiziert | Ja |
Abstract
The depth profiles of B deltas in Si produced under two somewhat extreme growth conditions, one in the range of standard molecular beam epitaxy (MBE) temperatures and the other one close to room temperature. In the latter, diffusion and segregation effects should be negligible. On the other hand, a silicon layer produced at low temperature can be expected to be amorphous, presumably with enhanced surface roughness, yet unpredictable in magnitude.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Jahrgang 18, Nr. 1, 01.01.2000, S. 524-258.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - In search of optimum conditions for the growth of sharp and shallow B-delta markers in Si by molecular beam epitaxy
AU - Wittmaack, K.
AU - Griesche, J.
AU - Osten, H. J.
AU - Patel, S. B.
PY - 2000/1/1
Y1 - 2000/1/1
N2 - The depth profiles of B deltas in Si produced under two somewhat extreme growth conditions, one in the range of standard molecular beam epitaxy (MBE) temperatures and the other one close to room temperature. In the latter, diffusion and segregation effects should be negligible. On the other hand, a silicon layer produced at low temperature can be expected to be amorphous, presumably with enhanced surface roughness, yet unpredictable in magnitude.
AB - The depth profiles of B deltas in Si produced under two somewhat extreme growth conditions, one in the range of standard molecular beam epitaxy (MBE) temperatures and the other one close to room temperature. In the latter, diffusion and segregation effects should be negligible. On the other hand, a silicon layer produced at low temperature can be expected to be amorphous, presumably with enhanced surface roughness, yet unpredictable in magnitude.
UR - http://www.scopus.com/inward/record.url?scp=0033684849&partnerID=8YFLogxK
U2 - 10.1116/1.591225
DO - 10.1116/1.591225
M3 - Article
AN - SCOPUS:0033684849
VL - 18
SP - 524
EP - 258
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 1
ER -