Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • Ayan Roy Chaudhuri
  • A. Fissel
  • V. R. Archakam
  • H. J. Osten

Organisationseinheiten

Externe Organisationen

  • Vellore Institute of Technology
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Details

OriginalspracheEnglisch
Aufsatznummer022904
FachzeitschriftApplied physics letters
Jahrgang102
Ausgabenummer2
PublikationsstatusVeröffentlicht - 14 Jan. 2013

Abstract

We report about the effect of nitrogen doping on the electrical properties of epitaxial Gd2O3 thin films. Epitaxial Gd 2O3:N thin films were grown on Si (111) substrates by solid source molecular beam epitaxy using nitrous oxide as the nitridation agent. Substitutional nitrogen incorporation into the dielectric layer was confirmed by secondary ion mass spectroscopy and X-ray photoelectron spectroscopy analysis. Substantial reduction of the leakage current density and disappearance of hysteresis in capacitance-voltage characteristics observed in the Gd2O3:N layers indicate that nitrogen incorporation in Gd2O3 effectively eliminates the adverse effects of the oxygen vacancy induced defects in the oxide layer.

ASJC Scopus Sachgebiete

Zitieren

Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping. / Roy Chaudhuri, Ayan; Fissel, A.; Archakam, V. R. et al.
in: Applied physics letters, Jahrgang 102, Nr. 2, 022904, 14.01.2013.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Roy Chaudhuri, A., Fissel, A., Archakam, V. R., & Osten, H. J. (2013). Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping. Applied physics letters, 102(2), Artikel 022904. https://doi.org/10.1063/1.4775688
Roy Chaudhuri A, Fissel A, Archakam VR, Osten HJ. Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping. Applied physics letters. 2013 Jan 14;102(2):022904. doi: 10.1063/1.4775688
Roy Chaudhuri, Ayan ; Fissel, A. ; Archakam, V. R. et al. / Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping. in: Applied physics letters. 2013 ; Jahrgang 102, Nr. 2.
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