Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 909-914 |
| Seitenumfang | 6 |
| Fachzeitschrift | IEEE International Symposium on Electromagnetic Compatibility |
| Jahrgang | 2 |
| Publikationsstatus | Veröffentlicht - 2000 |
| Veranstaltung | 2000 IEEE International Symposium on Electronic Compatibility - Washington, DC, USA Dauer: 21 Aug. 2000 → 25 Aug. 2000 |
Abstract
GTEM cell measurements of a DUT are used to predict the equivalent OATS radiated field. Therefore the DUT is modeled by multipoles. Presently used algorithms include several assumptions in amplitude, phase and position of the multipoles. This paper points out the influence of these assumptions to the simulated OATS field.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: IEEE International Symposium on Electromagnetic Compatibility, Jahrgang 2, 2000, S. 909-914.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Improvement of GTEM to OATS correlation
AU - Heidemann, M.
AU - Garbe, H.
PY - 2000
Y1 - 2000
N2 - GTEM cell measurements of a DUT are used to predict the equivalent OATS radiated field. Therefore the DUT is modeled by multipoles. Presently used algorithms include several assumptions in amplitude, phase and position of the multipoles. This paper points out the influence of these assumptions to the simulated OATS field.
AB - GTEM cell measurements of a DUT are used to predict the equivalent OATS radiated field. Therefore the DUT is modeled by multipoles. Presently used algorithms include several assumptions in amplitude, phase and position of the multipoles. This paper points out the influence of these assumptions to the simulated OATS field.
UR - http://www.scopus.com/inward/record.url?scp=0033710685&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0033710685
VL - 2
SP - 909
EP - 914
JO - IEEE International Symposium on Electromagnetic Compatibility
JF - IEEE International Symposium on Electromagnetic Compatibility
SN - 0190-1494
T2 - 2000 IEEE International Symposium on Electronic Compatibility
Y2 - 21 August 2000 through 25 August 2000
ER -