Improved thermal stability at high temperature of operation (473 K) in all epitaxy Nd2O3/AlGaN/GaN MOSHEMT

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Autoren

  • Umang Singh
  • Hannah Genath
  • Ritam Sarkar
  • Jan Kruegener
  • H. Joerg Osten
  • Apurba Laha

Externe Organisationen

  • Indian Institute of Technology Bombay (IITB)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des SammelwerksIEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2024
UntertitelStrengthening the Globalization in Semiconductors
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers Inc.
Seitenumfang3
ISBN (elektronisch)9798350371529
ISBN (Print)979-8-3503-8308-9
PublikationsstatusVeröffentlicht - 2024
Veranstaltung8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 - Bangalore, Indien
Dauer: 3 März 20246 März 2024

Abstract

In this article, we report the temperature-dependent transistor characteristics of Epi-Nd2O3/AlGaN/GaN MOSHEMT. The entire heterostructure, including epi-Nd2O3, is grown by Molecular Beam Epitaxy technique (MBE). The introduction of an epitaxial rare earth oxide reduces the OFF current of the transistor while it also makes it temperature independent at least up to 473 K [9]. The thickness of the oxide taken is 5.2 nm. It is observed here that the gate leakage current of all epitaxy MOSHEMT measured at 298 K and at 473 K, respectively, remains unchanged. The Ion/Ioff ratio of the MOSHEMT is seen to improve by an order of magnitude approximately 2 as compared to metal semiconductor HEMT (MSHEMT). The ON current of the transistor is observed to decrease with an increase in temperature because of polar optical phonon scattering. Reliability study by application of bias thermal stress is also done for the fabricated MOSHEMT.

ASJC Scopus Sachgebiete

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Improved thermal stability at high temperature of operation (473 K) in all epitaxy Nd2O3/AlGaN/GaN MOSHEMT. / Singh, Umang; Genath, Hannah; Sarkar, Ritam et al.
IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2024: Strengthening the Globalization in Semiconductors. Institute of Electrical and Electronics Engineers Inc., 2024.

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Singh, U, Genath, H, Sarkar, R, Kruegener, J, Osten, HJ & Laha, A 2024, Improved thermal stability at high temperature of operation (473 K) in all epitaxy Nd2O3/AlGaN/GaN MOSHEMT. in IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2024: Strengthening the Globalization in Semiconductors. Institute of Electrical and Electronics Engineers Inc., 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024, Bangalore, Indien, 3 März 2024. https://doi.org/10.1109/EDTM58488.2024.10511702
Singh, U., Genath, H., Sarkar, R., Kruegener, J., Osten, H. J., & Laha, A. (2024). Improved thermal stability at high temperature of operation (473 K) in all epitaxy Nd2O3/AlGaN/GaN MOSHEMT. In IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2024: Strengthening the Globalization in Semiconductors Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM58488.2024.10511702
Singh U, Genath H, Sarkar R, Kruegener J, Osten HJ, Laha A. Improved thermal stability at high temperature of operation (473 K) in all epitaxy Nd2O3/AlGaN/GaN MOSHEMT. in IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2024: Strengthening the Globalization in Semiconductors. Institute of Electrical and Electronics Engineers Inc. 2024 doi: 10.1109/EDTM58488.2024.10511702
Singh, Umang ; Genath, Hannah ; Sarkar, Ritam et al. / Improved thermal stability at high temperature of operation (473 K) in all epitaxy Nd2O3/AlGaN/GaN MOSHEMT. IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2024: Strengthening the Globalization in Semiconductors. Institute of Electrical and Electronics Engineers Inc., 2024.
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title = "Improved thermal stability at high temperature of operation (473 K) in all epitaxy Nd2O3/AlGaN/GaN MOSHEMT",
abstract = "In this article, we report the temperature-dependent transistor characteristics of Epi-Nd2O3/AlGaN/GaN MOSHEMT. The entire heterostructure, including epi-Nd2O3, is grown by Molecular Beam Epitaxy technique (MBE). The introduction of an epitaxial rare earth oxide reduces the OFF current of the transistor while it also makes it temperature independent at least up to 473 K [9]. The thickness of the oxide taken is 5.2 nm. It is observed here that the gate leakage current of all epitaxy MOSHEMT measured at 298 K and at 473 K, respectively, remains unchanged. The Ion/Ioff ratio of the MOSHEMT is seen to improve by an order of magnitude approximately 2 as compared to metal semiconductor HEMT (MSHEMT). The ON current of the transistor is observed to decrease with an increase in temperature because of polar optical phonon scattering. Reliability study by application of bias thermal stress is also done for the fabricated MOSHEMT.",
keywords = "Epitaxial Nd2O3, MOSHEMT, Reliability, thermal stability",
author = "Umang Singh and Hannah Genath and Ritam Sarkar and Jan Kruegener and Osten, {H. Joerg} and Apurba Laha",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 ; Conference date: 03-03-2024 Through 06-03-2024",
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Download

TY - GEN

T1 - Improved thermal stability at high temperature of operation (473 K) in all epitaxy Nd2O3/AlGaN/GaN MOSHEMT

AU - Singh, Umang

AU - Genath, Hannah

AU - Sarkar, Ritam

AU - Kruegener, Jan

AU - Osten, H. Joerg

AU - Laha, Apurba

N1 - Publisher Copyright: © 2024 IEEE.

PY - 2024

Y1 - 2024

N2 - In this article, we report the temperature-dependent transistor characteristics of Epi-Nd2O3/AlGaN/GaN MOSHEMT. The entire heterostructure, including epi-Nd2O3, is grown by Molecular Beam Epitaxy technique (MBE). The introduction of an epitaxial rare earth oxide reduces the OFF current of the transistor while it also makes it temperature independent at least up to 473 K [9]. The thickness of the oxide taken is 5.2 nm. It is observed here that the gate leakage current of all epitaxy MOSHEMT measured at 298 K and at 473 K, respectively, remains unchanged. The Ion/Ioff ratio of the MOSHEMT is seen to improve by an order of magnitude approximately 2 as compared to metal semiconductor HEMT (MSHEMT). The ON current of the transistor is observed to decrease with an increase in temperature because of polar optical phonon scattering. Reliability study by application of bias thermal stress is also done for the fabricated MOSHEMT.

AB - In this article, we report the temperature-dependent transistor characteristics of Epi-Nd2O3/AlGaN/GaN MOSHEMT. The entire heterostructure, including epi-Nd2O3, is grown by Molecular Beam Epitaxy technique (MBE). The introduction of an epitaxial rare earth oxide reduces the OFF current of the transistor while it also makes it temperature independent at least up to 473 K [9]. The thickness of the oxide taken is 5.2 nm. It is observed here that the gate leakage current of all epitaxy MOSHEMT measured at 298 K and at 473 K, respectively, remains unchanged. The Ion/Ioff ratio of the MOSHEMT is seen to improve by an order of magnitude approximately 2 as compared to metal semiconductor HEMT (MSHEMT). The ON current of the transistor is observed to decrease with an increase in temperature because of polar optical phonon scattering. Reliability study by application of bias thermal stress is also done for the fabricated MOSHEMT.

KW - Epitaxial Nd2O3

KW - MOSHEMT

KW - Reliability

KW - thermal stability

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U2 - 10.1109/EDTM58488.2024.10511702

DO - 10.1109/EDTM58488.2024.10511702

M3 - Conference contribution

AN - SCOPUS:85193263305

SN - 979-8-3503-8308-9

BT - IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2024

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024

Y2 - 3 March 2024 through 6 March 2024

ER -

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