Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 88-94 |
| Seitenumfang | 7 |
| Fachzeitschrift | Energy Procedia |
| Jahrgang | 27 |
| Frühes Online-Datum | 25 Aug. 2012 |
| Publikationsstatus | Veröffentlicht - 2012 |
| Extern publiziert | Ja |
| Veranstaltung | 2nd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2012 - Leuven, Belgien Dauer: 3 Apr. 2012 → 5 Apr. 2012 |
Abstract
Accurate modeling of the intrinsic recombination in silicon is important for device simulation as well as for interpreting measured effective carrier lifetime data. In this contribution we study the injection-dependent effective carrier lifetime applying advanced surface passivation techniques based on Al2O3 or SiNx We show that in some cases the measured lifetime data significantly exceeds the previously accepted intrinsic lifetime limit proposed by Kerr and Cuevas [1]. To verify our measurements we independently perform lifetime measurements with different measurement techniques in two different laboratories. Based on effective lifetime measurements we develop an advanced parameterization of the intrinsic lifetime in crystalline silicon at 300 K as a function of the doping density and the injection level, which accounts for Coulomb-enhanced Auger recombination and Coulomb-enhanced radiative recombination.
ASJC Scopus Sachgebiete
- Energie (insg.)
- Allgemeine Energie
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in: Energy Procedia, Jahrgang 27, 2012, S. 88-94.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Improved parameterization of Auger recombination in silicon
AU - Richter, A.
AU - Werner, F.
AU - Cuevas, A.
AU - Schmidt, J.
AU - Glunz, S. W.
PY - 2012
Y1 - 2012
N2 - Accurate modeling of the intrinsic recombination in silicon is important for device simulation as well as for interpreting measured effective carrier lifetime data. In this contribution we study the injection-dependent effective carrier lifetime applying advanced surface passivation techniques based on Al2O3 or SiNx We show that in some cases the measured lifetime data significantly exceeds the previously accepted intrinsic lifetime limit proposed by Kerr and Cuevas [1]. To verify our measurements we independently perform lifetime measurements with different measurement techniques in two different laboratories. Based on effective lifetime measurements we develop an advanced parameterization of the intrinsic lifetime in crystalline silicon at 300 K as a function of the doping density and the injection level, which accounts for Coulomb-enhanced Auger recombination and Coulomb-enhanced radiative recombination.
AB - Accurate modeling of the intrinsic recombination in silicon is important for device simulation as well as for interpreting measured effective carrier lifetime data. In this contribution we study the injection-dependent effective carrier lifetime applying advanced surface passivation techniques based on Al2O3 or SiNx We show that in some cases the measured lifetime data significantly exceeds the previously accepted intrinsic lifetime limit proposed by Kerr and Cuevas [1]. To verify our measurements we independently perform lifetime measurements with different measurement techniques in two different laboratories. Based on effective lifetime measurements we develop an advanced parameterization of the intrinsic lifetime in crystalline silicon at 300 K as a function of the doping density and the injection level, which accounts for Coulomb-enhanced Auger recombination and Coulomb-enhanced radiative recombination.
KW - Aluminum oxide
KW - Auger recombination
KW - Crystalline silicon
KW - Radiative recombination
KW - Surface passivation
UR - http://www.scopus.com/inward/record.url?scp=84868523256&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2012.07.034
DO - 10.1016/j.egypro.2012.07.034
M3 - Conference article
AN - SCOPUS:84868523256
VL - 27
SP - 88
EP - 94
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 2nd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2012
Y2 - 3 April 2012 through 5 April 2012
ER -