Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2009 16th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2009 |
| Seiten | 391-394 |
| Seitenumfang | 4 |
| Publikationsstatus | Veröffentlicht - 2009 |
| Veranstaltung | 2009 16th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2009 - Yasmine Hammamet, Tunesien Dauer: 13 Dez. 2009 → 16 Dez. 2009 |
Publikationsreihe
| Name | 2009 16th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2009 |
|---|
Abstract
This paper presets a 8.5 W GaN inverse class-E power amplifier using an output matching network suitable for high power applications. The presented output matching network overcomes several problems i. The original implementation. First a transmission line stub is used directly at the transistor drain to compensate for the drain source capacitance, secon. The lumped inductor i. The original implementation is replaced by a short transmission line, which makes it suitable for high power amplifiers. The designed GaN inverse class-E amplifier achieves a maximum drain efficiency of 77 % with output power of 39 dBm at a drain supply voltage of 35 V. Additionally through varyin. The supply voltag. The presented amplifier gives a drain efficiency greater than 70 % over an 8 dB dynamic range.
ASJC Scopus Sachgebiete
- Informatik (insg.)
- Hardware und Architektur
- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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- BibTex
- RIS
2009 16th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2009. 2009. S. 391-394 5410908 (2009 16th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2009).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Improved inverse class-E matching network for microwave high power amplifiers
AU - El Din, Mohamed Gamai
AU - Geck, Bernd
AU - Eul, H.
PY - 2009
Y1 - 2009
N2 - This paper presets a 8.5 W GaN inverse class-E power amplifier using an output matching network suitable for high power applications. The presented output matching network overcomes several problems i. The original implementation. First a transmission line stub is used directly at the transistor drain to compensate for the drain source capacitance, secon. The lumped inductor i. The original implementation is replaced by a short transmission line, which makes it suitable for high power amplifiers. The designed GaN inverse class-E amplifier achieves a maximum drain efficiency of 77 % with output power of 39 dBm at a drain supply voltage of 35 V. Additionally through varyin. The supply voltag. The presented amplifier gives a drain efficiency greater than 70 % over an 8 dB dynamic range.
AB - This paper presets a 8.5 W GaN inverse class-E power amplifier using an output matching network suitable for high power applications. The presented output matching network overcomes several problems i. The original implementation. First a transmission line stub is used directly at the transistor drain to compensate for the drain source capacitance, secon. The lumped inductor i. The original implementation is replaced by a short transmission line, which makes it suitable for high power amplifiers. The designed GaN inverse class-E amplifier achieves a maximum drain efficiency of 77 % with output power of 39 dBm at a drain supply voltage of 35 V. Additionally through varyin. The supply voltag. The presented amplifier gives a drain efficiency greater than 70 % over an 8 dB dynamic range.
KW - GaN
KW - Inverse class-E
KW - Power amplifiers
UR - http://www.scopus.com/inward/record.url?scp=77951492328&partnerID=8YFLogxK
U2 - 10.1109/ICECS.2009.5410908
DO - 10.1109/ICECS.2009.5410908
M3 - Conference contribution
AN - SCOPUS:77951492328
SN - 9781424450916
T3 - 2009 16th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2009
SP - 391
EP - 394
BT - 2009 16th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2009
T2 - 2009 16th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2009
Y2 - 13 December 2009 through 16 December 2009
ER -