Improved black silicon for photovoltaic applications

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • Michael Algasinger
  • Julie Paye
  • Florian Werner
  • Jan Schmidt
  • Martin S. Brandt
  • Martin Stutzmann
  • Svetoslav Koynov

Externe Organisationen

  • Technische Universität München (TUM)
  • Institut für Solarenergieforschung GmbH (ISFH)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)1068-1074
Seitenumfang7
FachzeitschriftAdvanced energy materials
Jahrgang3
Ausgabenummer8
PublikationsstatusVeröffentlicht - Aug. 2013
Extern publiziertJa

Abstract

The morphology and the electronic properties of monocrystalline Si (c-Si) with a nano-textured "black" surface, obtained by a metal-catalyzed wet etching process, and the improvement by an additional chemical treatment are examined with regard to solar cell applications. Photoluminescence and optical reflectivity measurements show the presence of a nano-porous Si (np-Si) phase in the as-prepared nano-texture. It is found that an additional wet chemical treatment with the standard clean 1 of the common RCA cleaning process removes the np-Si fraction and significantly alters the surface of the nano-structure. Cross-sectional scanning electron microscopy images reveal a pronounced reduction of the surface area, to values of only 3-6 times that of a planar surface. Electron spin resonance measurements were performed to investigate the type and quantity of defects induced by the nano-texturing process. The optimized nano-texture exhibits a Si dangling bond density comparable to planar c-Si wafers. Electrically detected magnetic resonance spectra reveal an additional paramagnetic defect present in the nano-textured Si, linked to a hydrogen- or oxygen-related double donor. In addition, initial results on the passivation of surface defects via atomic layer deposition of Al 2O3 are presented. Photoconductance decay measurements of passivated samples show a tenfold increase of the effective lifetime for nano-textures which have received the additional etching treatment. The improved electronic quality of the nano-textured surface makes it an interesting candidate for application as an anti-reflection surface in solar cells. The morphology and the electronic properties of nanotextured "black" silicon, obtained by a metal-catalyzed wet etching process, and the improvement by an additional chemical treatment are examined with regard to solar cell applications. The improved nanotexture exhibits an optically graded surface with minimal surface area and a defect density comparable to planar c-Si wafers. Al2O3-passivated nanotextures, modified by the additional chemical treatment, show a tenfold higher effective lifetime.

Zitieren

Improved black silicon for photovoltaic applications. / Algasinger, Michael; Paye, Julie; Werner, Florian et al.
in: Advanced energy materials, Jahrgang 3, Nr. 8, 08.2013, S. 1068-1074.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Algasinger, M, Paye, J, Werner, F, Schmidt, J, Brandt, MS, Stutzmann, M & Koynov, S 2013, 'Improved black silicon for photovoltaic applications', Advanced energy materials, Jg. 3, Nr. 8, S. 1068-1074. https://doi.org/10.1002/aenm.201201038
Algasinger, M., Paye, J., Werner, F., Schmidt, J., Brandt, M. S., Stutzmann, M., & Koynov, S. (2013). Improved black silicon for photovoltaic applications. Advanced energy materials, 3(8), 1068-1074. https://doi.org/10.1002/aenm.201201038
Algasinger M, Paye J, Werner F, Schmidt J, Brandt MS, Stutzmann M et al. Improved black silicon for photovoltaic applications. Advanced energy materials. 2013 Aug;3(8):1068-1074. doi: 10.1002/aenm.201201038
Algasinger, Michael ; Paye, Julie ; Werner, Florian et al. / Improved black silicon for photovoltaic applications. in: Advanced energy materials. 2013 ; Jahrgang 3, Nr. 8. S. 1068-1074.
Download
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T1 - Improved black silicon for photovoltaic applications

AU - Algasinger, Michael

AU - Paye, Julie

AU - Werner, Florian

AU - Schmidt, Jan

AU - Brandt, Martin S.

AU - Stutzmann, Martin

AU - Koynov, Svetoslav

PY - 2013/8

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N2 - The morphology and the electronic properties of monocrystalline Si (c-Si) with a nano-textured "black" surface, obtained by a metal-catalyzed wet etching process, and the improvement by an additional chemical treatment are examined with regard to solar cell applications. Photoluminescence and optical reflectivity measurements show the presence of a nano-porous Si (np-Si) phase in the as-prepared nano-texture. It is found that an additional wet chemical treatment with the standard clean 1 of the common RCA cleaning process removes the np-Si fraction and significantly alters the surface of the nano-structure. Cross-sectional scanning electron microscopy images reveal a pronounced reduction of the surface area, to values of only 3-6 times that of a planar surface. Electron spin resonance measurements were performed to investigate the type and quantity of defects induced by the nano-texturing process. The optimized nano-texture exhibits a Si dangling bond density comparable to planar c-Si wafers. Electrically detected magnetic resonance spectra reveal an additional paramagnetic defect present in the nano-textured Si, linked to a hydrogen- or oxygen-related double donor. In addition, initial results on the passivation of surface defects via atomic layer deposition of Al 2O3 are presented. Photoconductance decay measurements of passivated samples show a tenfold increase of the effective lifetime for nano-textures which have received the additional etching treatment. The improved electronic quality of the nano-textured surface makes it an interesting candidate for application as an anti-reflection surface in solar cells. The morphology and the electronic properties of nanotextured "black" silicon, obtained by a metal-catalyzed wet etching process, and the improvement by an additional chemical treatment are examined with regard to solar cell applications. The improved nanotexture exhibits an optically graded surface with minimal surface area and a defect density comparable to planar c-Si wafers. Al2O3-passivated nanotextures, modified by the additional chemical treatment, show a tenfold higher effective lifetime.

AB - The morphology and the electronic properties of monocrystalline Si (c-Si) with a nano-textured "black" surface, obtained by a metal-catalyzed wet etching process, and the improvement by an additional chemical treatment are examined with regard to solar cell applications. Photoluminescence and optical reflectivity measurements show the presence of a nano-porous Si (np-Si) phase in the as-prepared nano-texture. It is found that an additional wet chemical treatment with the standard clean 1 of the common RCA cleaning process removes the np-Si fraction and significantly alters the surface of the nano-structure. Cross-sectional scanning electron microscopy images reveal a pronounced reduction of the surface area, to values of only 3-6 times that of a planar surface. Electron spin resonance measurements were performed to investigate the type and quantity of defects induced by the nano-texturing process. The optimized nano-texture exhibits a Si dangling bond density comparable to planar c-Si wafers. Electrically detected magnetic resonance spectra reveal an additional paramagnetic defect present in the nano-textured Si, linked to a hydrogen- or oxygen-related double donor. In addition, initial results on the passivation of surface defects via atomic layer deposition of Al 2O3 are presented. Photoconductance decay measurements of passivated samples show a tenfold increase of the effective lifetime for nano-textures which have received the additional etching treatment. The improved electronic quality of the nano-textured surface makes it an interesting candidate for application as an anti-reflection surface in solar cells. The morphology and the electronic properties of nanotextured "black" silicon, obtained by a metal-catalyzed wet etching process, and the improvement by an additional chemical treatment are examined with regard to solar cell applications. The improved nanotexture exhibits an optically graded surface with minimal surface area and a defect density comparable to planar c-Si wafers. Al2O3-passivated nanotextures, modified by the additional chemical treatment, show a tenfold higher effective lifetime.

KW - nanostructures

KW - semiconductors

KW - solar cells

KW - surface modification

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DO - 10.1002/aenm.201201038

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AN - SCOPUS:84882264487

VL - 3

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EP - 1074

JO - Advanced energy materials

JF - Advanced energy materials

SN - 1614-6832

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ER -

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