Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 143514 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 89 |
| Ausgabenummer | 14 |
| Frühes Online-Datum | 5 Okt. 2006 |
| Publikationsstatus | Veröffentlicht - 5 Okt. 2006 |
Abstract
The authors compare the properties of epitaxial Gd2 O3 thin films grown on silicon substrates with three different orientations for high- K application. Pt Gd2 O3 Si (111) and Pt Gd2 O3 Si (110) metal oxide semiconductor heterostructures show promising electrical properties and hence, could be considered for future generation of complementary metal oxide semiconductor devices. Capacitance equivalent oxide thicknesses estimated from capacitance versus voltage characteristics are 0.97, 1.12, and 0.93 nm for the films grown on Si(001), Si(111), and Si(110) substrates, respectively. The films exhibit good insulating property with leakage current densities of 0.4, 0.5, and 4.5 mA cm2, respectively, at (Vg - VFBV) =-1 V.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied physics letters, Jahrgang 89, Nr. 14, 143514, 05.10.2006.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high- K application
AU - Laha, Apurba
AU - Osten, H. J.
AU - Fissel, A.
N1 - Funding Information: This work was supported by the German Federal Ministry of Education and Research (BMBF) under the KrisMOS project (01M3142D). One of the authors (A.L.) would like to thank the Alexander von Humboldt Foundation for assigning a fellowship.
PY - 2006/10/5
Y1 - 2006/10/5
N2 - The authors compare the properties of epitaxial Gd2 O3 thin films grown on silicon substrates with three different orientations for high- K application. Pt Gd2 O3 Si (111) and Pt Gd2 O3 Si (110) metal oxide semiconductor heterostructures show promising electrical properties and hence, could be considered for future generation of complementary metal oxide semiconductor devices. Capacitance equivalent oxide thicknesses estimated from capacitance versus voltage characteristics are 0.97, 1.12, and 0.93 nm for the films grown on Si(001), Si(111), and Si(110) substrates, respectively. The films exhibit good insulating property with leakage current densities of 0.4, 0.5, and 4.5 mA cm2, respectively, at (Vg - VFBV) =-1 V.
AB - The authors compare the properties of epitaxial Gd2 O3 thin films grown on silicon substrates with three different orientations for high- K application. Pt Gd2 O3 Si (111) and Pt Gd2 O3 Si (110) metal oxide semiconductor heterostructures show promising electrical properties and hence, could be considered for future generation of complementary metal oxide semiconductor devices. Capacitance equivalent oxide thicknesses estimated from capacitance versus voltage characteristics are 0.97, 1.12, and 0.93 nm for the films grown on Si(001), Si(111), and Si(110) substrates, respectively. The films exhibit good insulating property with leakage current densities of 0.4, 0.5, and 4.5 mA cm2, respectively, at (Vg - VFBV) =-1 V.
UR - http://www.scopus.com/inward/record.url?scp=33749503742&partnerID=8YFLogxK
U2 - 10.1063/1.2360209
DO - 10.1063/1.2360209
M3 - Article
AN - SCOPUS:33749503742
VL - 89
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 14
M1 - 143514
ER -