Impact of Parasitics in Power Modules and Gate Drivers on TSEP-based Temperature Estimations

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Autorschaft

  • Daniel Herwig
  • Torben Brockhage
  • Axel Mertens
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Details

OriginalspracheEnglisch
Titel des Sammelwerks23rd International Conference on Electrical Machines and Systems, ICEMS 2020
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers Inc.
Seiten804-809
Seitenumfang6
ISBN (elektronisch)9784886864192
ISBN (Print)978-1-7281-8930-7
PublikationsstatusVeröffentlicht - 2020
Veranstaltung23rd International Conference on Electrical Machines and Systems, ICEMS 2020 - Hamamatsu, Japan
Dauer: 24 Nov. 202027 Nov. 2020

Abstract

Temperature-Sensitive Electrical Parameters (TSEPs) are broadly discussed for on-line determination of the junction temperature of semiconductors and as key parameters for remaining lifetime estimation and degradation detection. Among the most prominent classes are forward voltage and switching times. Beside their dependency on load current and dc-link voltage, TSEPs used with large power modules in industry applications are affected by parasitic effects like gate drive voltage instability or temperature variations of added internal gate resistors. After calibrating TSEPs on the laboratory scale, the mapping between TSEP and temperature often fails when the inverter is operated in regular PWM mode. This paper focuses on parasitic effects that potentially cause deviations between TSEP calibration on the laboratory scale and regular operation of the inverter with focus on larger power modules. Multiple TSEPs are combined, aiming at an improved transferability of TSEPs between different modes of operation and robustness towards parasitics.

ASJC Scopus Sachgebiete

Zitieren

Impact of Parasitics in Power Modules and Gate Drivers on TSEP-based Temperature Estimations. / Herwig, Daniel; Brockhage, Torben; Mertens, Axel.
23rd International Conference on Electrical Machines and Systems, ICEMS 2020. Institute of Electrical and Electronics Engineers Inc., 2020. S. 804-809 9291091.

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Herwig, D, Brockhage, T & Mertens, A 2020, Impact of Parasitics in Power Modules and Gate Drivers on TSEP-based Temperature Estimations. in 23rd International Conference on Electrical Machines and Systems, ICEMS 2020., 9291091, Institute of Electrical and Electronics Engineers Inc., S. 804-809, 23rd International Conference on Electrical Machines and Systems, ICEMS 2020, Hamamatsu, Japan, 24 Nov. 2020. https://doi.org/10.23919/ICEMS50442.2020.9291091
Herwig, D., Brockhage, T., & Mertens, A. (2020). Impact of Parasitics in Power Modules and Gate Drivers on TSEP-based Temperature Estimations. In 23rd International Conference on Electrical Machines and Systems, ICEMS 2020 (S. 804-809). Artikel 9291091 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/ICEMS50442.2020.9291091
Herwig D, Brockhage T, Mertens A. Impact of Parasitics in Power Modules and Gate Drivers on TSEP-based Temperature Estimations. in 23rd International Conference on Electrical Machines and Systems, ICEMS 2020. Institute of Electrical and Electronics Engineers Inc. 2020. S. 804-809. 9291091 doi: 10.23919/ICEMS50442.2020.9291091
Herwig, Daniel ; Brockhage, Torben ; Mertens, Axel. / Impact of Parasitics in Power Modules and Gate Drivers on TSEP-based Temperature Estimations. 23rd International Conference on Electrical Machines and Systems, ICEMS 2020. Institute of Electrical and Electronics Engineers Inc., 2020. S. 804-809
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abstract = "Temperature-Sensitive Electrical Parameters (TSEPs) are broadly discussed for on-line determination of the junction temperature of semiconductors and as key parameters for remaining lifetime estimation and degradation detection. Among the most prominent classes are forward voltage and switching times. Beside their dependency on load current and dc-link voltage, TSEPs used with large power modules in industry applications are affected by parasitic effects like gate drive voltage instability or temperature variations of added internal gate resistors. After calibrating TSEPs on the laboratory scale, the mapping between TSEP and temperature often fails when the inverter is operated in regular PWM mode. This paper focuses on parasitic effects that potentially cause deviations between TSEP calibration on the laboratory scale and regular operation of the inverter with focus on larger power modules. Multiple TSEPs are combined, aiming at an improved transferability of TSEPs between different modes of operation and robustness towards parasitics. ",
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AU - Brockhage, Torben

AU - Mertens, Axel

N1 - Funding Information: This work was funded by the German Federal Ministry of Education and Research under the funding code 16EMO0325. The authors are responsible for the content of this publication.

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AB - Temperature-Sensitive Electrical Parameters (TSEPs) are broadly discussed for on-line determination of the junction temperature of semiconductors and as key parameters for remaining lifetime estimation and degradation detection. Among the most prominent classes are forward voltage and switching times. Beside their dependency on load current and dc-link voltage, TSEPs used with large power modules in industry applications are affected by parasitic effects like gate drive voltage instability or temperature variations of added internal gate resistors. After calibrating TSEPs on the laboratory scale, the mapping between TSEP and temperature often fails when the inverter is operated in regular PWM mode. This paper focuses on parasitic effects that potentially cause deviations between TSEP calibration on the laboratory scale and regular operation of the inverter with focus on larger power modules. Multiple TSEPs are combined, aiming at an improved transferability of TSEPs between different modes of operation and robustness towards parasitics.

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