Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 152905 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 88 |
| Ausgabenummer | 15 |
| Frühes Online-Datum | 10 Apr. 2006 |
| Publikationsstatus | Veröffentlicht - 10 Apr. 2006 |
Abstract
We investigated the influence of additional oxygen supply and temperature during the growth of thin Gd2 O3 layers on Si(001) with molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly; however, too high oxygen partial pressures lead to an increase in the lower permittivity interfacial layer thickness. The growth temperature mainly influences the dielectric gate stack properties due to changes of the Gd2 O3 Si interface structure. Optimized conditions (600 °C and p O2 =5× 10-7 mbar) were found to achieve equivalent oxide thickness values below 1 nm accompanied by leakage current densities below 1 mA cm2 at 1 V.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied physics letters, Jahrgang 88, Nr. 15, 152905, 10.04.2006.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si(001)
AU - Czernohorsky, M.
AU - Bugiel, E.
AU - Osten, H. J.
AU - Fissel, A.
AU - Kirfel, O.
N1 - Funding Information: This work was supported by the German Federal Ministry of Education and Research (BMBF) under the KrisMOS project (01M3142D).
PY - 2006/4/10
Y1 - 2006/4/10
N2 - We investigated the influence of additional oxygen supply and temperature during the growth of thin Gd2 O3 layers on Si(001) with molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly; however, too high oxygen partial pressures lead to an increase in the lower permittivity interfacial layer thickness. The growth temperature mainly influences the dielectric gate stack properties due to changes of the Gd2 O3 Si interface structure. Optimized conditions (600 °C and p O2 =5× 10-7 mbar) were found to achieve equivalent oxide thickness values below 1 nm accompanied by leakage current densities below 1 mA cm2 at 1 V.
AB - We investigated the influence of additional oxygen supply and temperature during the growth of thin Gd2 O3 layers on Si(001) with molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly; however, too high oxygen partial pressures lead to an increase in the lower permittivity interfacial layer thickness. The growth temperature mainly influences the dielectric gate stack properties due to changes of the Gd2 O3 Si interface structure. Optimized conditions (600 °C and p O2 =5× 10-7 mbar) were found to achieve equivalent oxide thickness values below 1 nm accompanied by leakage current densities below 1 mA cm2 at 1 V.
UR - http://www.scopus.com/inward/record.url?scp=33646150430&partnerID=8YFLogxK
U2 - 10.1063/1.2194227
DO - 10.1063/1.2194227
M3 - Article
AN - SCOPUS:33646150430
VL - 88
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 15
M1 - 152905
ER -