Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022 |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (elektronisch) | 9781728193878 |
| ISBN (Print) | 978-1-7281-9388-5 |
| Publikationsstatus | Veröffentlicht - 2022 |
| Veranstaltung | 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022 - Detroit, USA / Vereinigte Staaten Dauer: 9 Okt. 2022 → 13 Okt. 2022 |
Abstract
In transformerless single-phase photovoltaic (PV) power systems, leakage currents are a well-known issue, as these can cause electromagnetic interference (EMI) problems, which are limited by standards. To prevent this, two hybrid unipolar modulation techniques with only constant or grid-frequency common mode (cm) voltage variations have been identified for a differential buck inverter. Each of these modulation schemes causes a different, asymmetric switching- and conduction loss distribution between high- and low-side transistors. Therefore, a selection of transistors with different die-sizes for high-side and low-side transistors appears to be advantageous regarding various factors, such as inverter efficiency, total die-size, and heat distribution. The objective of this paper is to investigate the effect of different high-side and low-side transistor combinations on the total loss and to identify beneficial combinations within a product line of GaN-HEMTs.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Ingenieurwesen (insg.)
- Maschinenbau
- Ingenieurwesen (insg.)
- Sicherheit, Risiko, Zuverlässigkeit und Qualität
- Energie (insg.)
- Energieanlagenbau und Kraftwerkstechnik
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Mathematik (insg.)
- Steuerung und Optimierung
Ziele für nachhaltige Entwicklung
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2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022. Institute of Electrical and Electronics Engineers Inc., 2022.
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Impact of GaN-HEMT Combinations with Different Die-Size on the Efficiency of a Single-Phase Photovoltaic Differential Buck Inverter
AU - Brinker, Tobias
AU - Mand, Philipp
AU - Friebe, Jens
N1 - Funding Information: Parts of this work were funded by the German Federal Ministry for Economic Affairs and Climate Action under Grant No. 03EE1057A (Voyager-PV) on the basis of a decision by the German Bundestag and also by the Ministry of Science and Culture of Lower Saxony and the Volkswagen Foundation. The authors are responsible for the content of this publication.
PY - 2022
Y1 - 2022
N2 - In transformerless single-phase photovoltaic (PV) power systems, leakage currents are a well-known issue, as these can cause electromagnetic interference (EMI) problems, which are limited by standards. To prevent this, two hybrid unipolar modulation techniques with only constant or grid-frequency common mode (cm) voltage variations have been identified for a differential buck inverter. Each of these modulation schemes causes a different, asymmetric switching- and conduction loss distribution between high- and low-side transistors. Therefore, a selection of transistors with different die-sizes for high-side and low-side transistors appears to be advantageous regarding various factors, such as inverter efficiency, total die-size, and heat distribution. The objective of this paper is to investigate the effect of different high-side and low-side transistor combinations on the total loss and to identify beneficial combinations within a product line of GaN-HEMTs.
AB - In transformerless single-phase photovoltaic (PV) power systems, leakage currents are a well-known issue, as these can cause electromagnetic interference (EMI) problems, which are limited by standards. To prevent this, two hybrid unipolar modulation techniques with only constant or grid-frequency common mode (cm) voltage variations have been identified for a differential buck inverter. Each of these modulation schemes causes a different, asymmetric switching- and conduction loss distribution between high- and low-side transistors. Therefore, a selection of transistors with different die-sizes for high-side and low-side transistors appears to be advantageous regarding various factors, such as inverter efficiency, total die-size, and heat distribution. The objective of this paper is to investigate the effect of different high-side and low-side transistor combinations on the total loss and to identify beneficial combinations within a product line of GaN-HEMTs.
KW - Analytical losses computation
KW - Gallium Nitride (GaN)
KW - high-electron mobility transistor (HEMT)
KW - micro-inverter
KW - modulation scheme
KW - photovoltaic
KW - single-phase
UR - http://www.scopus.com/inward/record.url?scp=85144015039&partnerID=8YFLogxK
U2 - 10.1109/ECCE50734.2022.9947778
DO - 10.1109/ECCE50734.2022.9947778
M3 - Conference contribution
AN - SCOPUS:85144015039
SN - 978-1-7281-9388-5
BT - 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022
Y2 - 9 October 2022 through 13 October 2022
ER -