Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | SiliconPV 2021 - 11th International Conference on Crystalline Silicon Photovoltaics |
| Herausgeber/-innen | Rolf Brendel, Christophe Ballif, Sebastien Dubois, Stefan Glunz, Giso Hahn, Jef Poortmans, Pierre Verlinden, Arthur Weeber |
| ISBN (elektronisch) | 9780735443624 |
| Publikationsstatus | Veröffentlicht - 24 Aug. 2022 |
| Veranstaltung | 11th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2021 - Hamelin, Virtual, Deutschland Dauer: 19 Apr. 2021 → 23 Apr. 2021 |
Publikationsreihe
| Name | AIP Conference Proceedings |
|---|---|
| Band | 2487 |
| ISSN (Print) | 0094-243X |
| ISSN (elektronisch) | 1551-7616 |
Abstract
Polysilicon based passivating contacts for solar cells are expected to gain significant market share in the future. To ensure successful deployment, understanding the long-term stability of any new product is essential. Degradation and recovery of lifetime can occur in the bulk and surface-related components of a solar cell. In this work, we use planar p-type Czochralski silicon (20 Ω.cm) to fabricate symmetrical lifetime samples featuring p- or n-poly-Si layers capped by AlOx or SiNy to study the impact of the capping layer under different firing conditions, followed by annealing and illumination, on degradation mechanisms. Initially, AlOx samples perform better than SiNy samples. After firing at different temperatures below 792 °C, the passivation quality of SiNy samples improves significantly, beyond that of AlOx capped samples. During accelerated degradation (dark annealing and light soaking under high intensity illumination), AlOx samples degrade slightly while SiNy samples demonstrate a significant degradation (directly correlated to the firing temperature), which is followed by recovery. This behaviour is similar to light- and elevated temperature-induced degradation in passivated emitter and rear solar cells, suggesting a possible hydrogen-related mechanism. Lifetime analysis shows that the strongest changes occur in low injection levels, while the dark saturation current remains virtually the same.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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SiliconPV 2021 - 11th International Conference on Crystalline Silicon Photovoltaics. Hrsg. / Rolf Brendel; Christophe Ballif; Sebastien Dubois; Stefan Glunz; Giso Hahn; Jef Poortmans; Pierre Verlinden; Arthur Weeber. 2022. 050006 (AIP Conference Proceedings; Band 2487).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Impact of Firing and Capping Layers on Long-term Stability of Doped Poly-Si Passivating Contact Layers
AU - Soeriyadi, Anastasia H.
AU - Hollemann, Christina
AU - Madumelu, Chukwuka
AU - Haase, Felix
AU - Römer, Udo
AU - Brendel, Rolf
AU - Peibst, Robby
AU - Hallam, Brett J.
N1 - Publisher Copyright: © 2022 American Institute of Physics Inc.. All rights reserved.
PY - 2022/8/24
Y1 - 2022/8/24
N2 - Polysilicon based passivating contacts for solar cells are expected to gain significant market share in the future. To ensure successful deployment, understanding the long-term stability of any new product is essential. Degradation and recovery of lifetime can occur in the bulk and surface-related components of a solar cell. In this work, we use planar p-type Czochralski silicon (20 Ω.cm) to fabricate symmetrical lifetime samples featuring p- or n-poly-Si layers capped by AlOx or SiNy to study the impact of the capping layer under different firing conditions, followed by annealing and illumination, on degradation mechanisms. Initially, AlOx samples perform better than SiNy samples. After firing at different temperatures below 792 °C, the passivation quality of SiNy samples improves significantly, beyond that of AlOx capped samples. During accelerated degradation (dark annealing and light soaking under high intensity illumination), AlOx samples degrade slightly while SiNy samples demonstrate a significant degradation (directly correlated to the firing temperature), which is followed by recovery. This behaviour is similar to light- and elevated temperature-induced degradation in passivated emitter and rear solar cells, suggesting a possible hydrogen-related mechanism. Lifetime analysis shows that the strongest changes occur in low injection levels, while the dark saturation current remains virtually the same.
AB - Polysilicon based passivating contacts for solar cells are expected to gain significant market share in the future. To ensure successful deployment, understanding the long-term stability of any new product is essential. Degradation and recovery of lifetime can occur in the bulk and surface-related components of a solar cell. In this work, we use planar p-type Czochralski silicon (20 Ω.cm) to fabricate symmetrical lifetime samples featuring p- or n-poly-Si layers capped by AlOx or SiNy to study the impact of the capping layer under different firing conditions, followed by annealing and illumination, on degradation mechanisms. Initially, AlOx samples perform better than SiNy samples. After firing at different temperatures below 792 °C, the passivation quality of SiNy samples improves significantly, beyond that of AlOx capped samples. During accelerated degradation (dark annealing and light soaking under high intensity illumination), AlOx samples degrade slightly while SiNy samples demonstrate a significant degradation (directly correlated to the firing temperature), which is followed by recovery. This behaviour is similar to light- and elevated temperature-induced degradation in passivated emitter and rear solar cells, suggesting a possible hydrogen-related mechanism. Lifetime analysis shows that the strongest changes occur in low injection levels, while the dark saturation current remains virtually the same.
UR - http://www.scopus.com/inward/record.url?scp=85137526393&partnerID=8YFLogxK
U2 - 10.1063/5.0089658
DO - 10.1063/5.0089658
M3 - Conference contribution
AN - SCOPUS:85137526393
T3 - AIP Conference Proceedings
BT - SiliconPV 2021 - 11th International Conference on Crystalline Silicon Photovoltaics
A2 - Brendel, Rolf
A2 - Ballif, Christophe
A2 - Dubois, Sebastien
A2 - Glunz, Stefan
A2 - Hahn, Giso
A2 - Poortmans, Jef
A2 - Verlinden, Pierre
A2 - Weeber, Arthur
T2 - 11th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2021
Y2 - 19 April 2021 through 23 April 2021
ER -