Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | SiliconPV 2021 - 11th International Conference on Crystalline Silicon Photovoltaics |
| Herausgeber/-innen | Rolf Brendel, Christophe Ballif, Sebastien Dubois, Stefan Glunz, Giso Hahn, Jef Poortmans, Pierre Verlinden, Arthur Weeber |
| ISBN (elektronisch) | 9780735443624 |
| Publikationsstatus | Veröffentlicht - 24 Aug. 2022 |
| Veranstaltung | 11th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2021 - Hamelin, Virtual, Deutschland Dauer: 19 Apr. 2021 → 23 Apr. 2021 |
Publikationsreihe
| Name | AIP Conference Proceedings |
|---|---|
| Band | 2487 |
| ISSN (Print) | 0094-243X |
| ISSN (elektronisch) | 1551-7616 |
Abstract
This paper presents the approach to reduce the deterioration of poly-Si based passivating contacts through screen-printed silver pastes by modifying the SiNx capping layer thickness and firing temperature. Its impact is investigated by fabricating p-type back junction solar cells featuring the passivating contacts at the cell rear side. We demonstrate that the improved contact formation without compromising of the quality of passivating contacts is possible if the firing temperature is optimized for the chosen SiNx layer thickness. On the full area of M2-sized industrial p-type Cz wafers, we achieve an open-circuit voltage of 716 mV and an efficiency of 22.6%, both independently. A median contact resistivity of 2 mΩcm2 is measured with transfer length method for the optimized SiNx layer thickness and firing temperature. The investigation with scanning electron microcopy shows that certain amount of small etch pits are necessary to form the contact between screen-printed silver and phosphorus-doped poly-Si properly. The best efficiency that we achieved so far with this cell concept is 22.9 %, independently confirmed.
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SiliconPV 2021 - 11th International Conference on Crystalline Silicon Photovoltaics. Hrsg. / Rolf Brendel; Christophe Ballif; Sebastien Dubois; Stefan Glunz; Giso Hahn; Jef Poortmans; Pierre Verlinden; Arthur Weeber. 2022. 020014 (AIP Conference Proceedings; Band 2487).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Impact of Dielectric Capping Layer Thickness on the Contact Formation between n+-type Passivating Contacts and Screen-printed Fire-through Silver Pastes
AU - Min, Byungsul
AU - Wehmeier, Nadine
AU - Brendemuehl, Till
AU - Haase, Felix
AU - Larionova, Yevgeniya
AU - Nasebandt, Lasse
AU - Schulte-Huxel, Henning
AU - Peibst, Robby
AU - Brendel, Rolf
N1 - Funding Information: The authors thank B. Gehring, M. Pollmann, R. Winter, S. Spaetlich, T. Neubert and D. Sylla for processing solar cells; T. Friedrich for TLM measurements; and K. Bothe, D. Hinken, and M. Wolf (all ISFH) for supporting IV measurements of busbarless solar cells. We also thank M Dhamrin and K. Tsuji from Toyo Aluminium for helpful advices and for providing the aluminium pastes and S. Huebner, T. Dippell, B. Wattenberg, and P. Wohlfahrt from Singulus Technologies AG for constructive discussions. This Work was financially supported by the German Federal Ministry of Economic Affairs and Energy (BMWi) under contact number 03EE1012A (NanoPERC) and a part of this work was supported under contact number 0324171C (Nextstep).
PY - 2022/8/24
Y1 - 2022/8/24
N2 - This paper presents the approach to reduce the deterioration of poly-Si based passivating contacts through screen-printed silver pastes by modifying the SiNx capping layer thickness and firing temperature. Its impact is investigated by fabricating p-type back junction solar cells featuring the passivating contacts at the cell rear side. We demonstrate that the improved contact formation without compromising of the quality of passivating contacts is possible if the firing temperature is optimized for the chosen SiNx layer thickness. On the full area of M2-sized industrial p-type Cz wafers, we achieve an open-circuit voltage of 716 mV and an efficiency of 22.6%, both independently. A median contact resistivity of 2 mΩcm2 is measured with transfer length method for the optimized SiNx layer thickness and firing temperature. The investigation with scanning electron microcopy shows that certain amount of small etch pits are necessary to form the contact between screen-printed silver and phosphorus-doped poly-Si properly. The best efficiency that we achieved so far with this cell concept is 22.9 %, independently confirmed.
AB - This paper presents the approach to reduce the deterioration of poly-Si based passivating contacts through screen-printed silver pastes by modifying the SiNx capping layer thickness and firing temperature. Its impact is investigated by fabricating p-type back junction solar cells featuring the passivating contacts at the cell rear side. We demonstrate that the improved contact formation without compromising of the quality of passivating contacts is possible if the firing temperature is optimized for the chosen SiNx layer thickness. On the full area of M2-sized industrial p-type Cz wafers, we achieve an open-circuit voltage of 716 mV and an efficiency of 22.6%, both independently. A median contact resistivity of 2 mΩcm2 is measured with transfer length method for the optimized SiNx layer thickness and firing temperature. The investigation with scanning electron microcopy shows that certain amount of small etch pits are necessary to form the contact between screen-printed silver and phosphorus-doped poly-Si properly. The best efficiency that we achieved so far with this cell concept is 22.9 %, independently confirmed.
UR - http://www.scopus.com/inward/record.url?scp=85137449225&partnerID=8YFLogxK
U2 - 10.1063/5.0089239
DO - 10.1063/5.0089239
M3 - Conference contribution
AN - SCOPUS:85137449225
T3 - AIP Conference Proceedings
BT - SiliconPV 2021 - 11th International Conference on Crystalline Silicon Photovoltaics
A2 - Brendel, Rolf
A2 - Ballif, Christophe
A2 - Dubois, Sebastien
A2 - Glunz, Stefan
A2 - Hahn, Giso
A2 - Poortmans, Jef
A2 - Verlinden, Pierre
A2 - Weeber, Arthur
T2 - 11th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2021
Y2 - 19 April 2021 through 23 April 2021
ER -