Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 152902 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 99 |
| Ausgabenummer | 15 |
| Publikationsstatus | Veröffentlicht - 10 Okt. 2011 |
Abstract
We report on the effect of carbon doping on electrical properties of epitaxial Gd2O3 grown on Si substrates. The incorporation of small amounts of carbon (0.2-0.5 vol. ) into epitaxial Gd2O 3 has been found to be very useful in improving the electrical properties especially by reducing the leakage current behavior. The doping has a negligible impact on the structural quality of the oxide layer. We show that the very often found adverse effect of oxygen vacancy induced defects in oxides grown at higher temperature can be eliminated by moderate amount of carbon doping during growth.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied physics letters, Jahrgang 99, Nr. 15, 152902, 10.10.2011.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon
T2 - An experimental study on electrical properties
AU - Laha, Apurba
AU - Ai, B.
AU - Babu, P. R.P.
AU - Fissel, A.
AU - Osten, H. J.
PY - 2011/10/10
Y1 - 2011/10/10
N2 - We report on the effect of carbon doping on electrical properties of epitaxial Gd2O3 grown on Si substrates. The incorporation of small amounts of carbon (0.2-0.5 vol. ) into epitaxial Gd2O 3 has been found to be very useful in improving the electrical properties especially by reducing the leakage current behavior. The doping has a negligible impact on the structural quality of the oxide layer. We show that the very often found adverse effect of oxygen vacancy induced defects in oxides grown at higher temperature can be eliminated by moderate amount of carbon doping during growth.
AB - We report on the effect of carbon doping on electrical properties of epitaxial Gd2O3 grown on Si substrates. The incorporation of small amounts of carbon (0.2-0.5 vol. ) into epitaxial Gd2O 3 has been found to be very useful in improving the electrical properties especially by reducing the leakage current behavior. The doping has a negligible impact on the structural quality of the oxide layer. We show that the very often found adverse effect of oxygen vacancy induced defects in oxides grown at higher temperature can be eliminated by moderate amount of carbon doping during growth.
UR - http://www.scopus.com/inward/record.url?scp=80055009907&partnerID=8YFLogxK
U2 - 10.1063/1.3646104
DO - 10.1063/1.3646104
M3 - Article
AN - SCOPUS:80055009907
VL - 99
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 15
M1 - 152902
ER -