Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 245308 |
| Fachzeitschrift | Journal of applied physics |
| Jahrgang | 118 |
| Ausgabenummer | 24 |
| Publikationsstatus | Veröffentlicht - 31 Dez. 2015 |
Abstract
We report about the influence of boron (B) on surface morphology of Si layers grown by molecular beam epitaxy on Si(111) mesas. Dimension of step-free mesa areas is reduced in comparison to pristine Si and scales with the B-coverage. This can be explained by a reduced mass transport on the Si surface in the presence of B-induced 3 × 3 surface structure which is due to a reduced Si equilibrium free adatom density. We demonstrate that a suitable combination of initial B coverage and Si layer thickness results in large step free areas and B doping concentration up to 4 × 1018cm-3.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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in: Journal of applied physics, Jahrgang 118, Nr. 24, 245308, 31.12.2015.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Impact of boron on the step-free area formation on Si(111) mesa structures
AU - Roy Chaudhuri, Ayan
AU - Osten, H. J.
AU - Fissel, A.
PY - 2015/12/31
Y1 - 2015/12/31
N2 - We report about the influence of boron (B) on surface morphology of Si layers grown by molecular beam epitaxy on Si(111) mesas. Dimension of step-free mesa areas is reduced in comparison to pristine Si and scales with the B-coverage. This can be explained by a reduced mass transport on the Si surface in the presence of B-induced 3 × 3 surface structure which is due to a reduced Si equilibrium free adatom density. We demonstrate that a suitable combination of initial B coverage and Si layer thickness results in large step free areas and B doping concentration up to 4 × 1018cm-3.
AB - We report about the influence of boron (B) on surface morphology of Si layers grown by molecular beam epitaxy on Si(111) mesas. Dimension of step-free mesa areas is reduced in comparison to pristine Si and scales with the B-coverage. This can be explained by a reduced mass transport on the Si surface in the presence of B-induced 3 × 3 surface structure which is due to a reduced Si equilibrium free adatom density. We demonstrate that a suitable combination of initial B coverage and Si layer thickness results in large step free areas and B doping concentration up to 4 × 1018cm-3.
UR - http://www.scopus.com/inward/record.url?scp=84954171731&partnerID=8YFLogxK
U2 - 10.1063/1.4939160
DO - 10.1063/1.4939160
M3 - Article
AN - SCOPUS:84954171731
VL - 118
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 24
M1 - 245308
ER -