Impact of border traps in ultrathin metal-organic framework Cu3(BTC)2 based capacitors

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OriginalspracheEnglisch
Seiten (von - bis)136-141
Seitenumfang6
FachzeitschriftMicroporous and Mesoporous Materials
Jahrgang277
Frühes Online-Datum28 Okt. 2018
PublikationsstatusVeröffentlicht - 15 März 2019

Abstract

The synthesis of metal-organic frameworks (MOFs) as thin films allows their integration into different electronic devices. Particularly, their application in metal-insulating-semiconductor (MIS) capacitors provides a comprehensive study of the electrical transport mechanism and, therefore, of the effect of border traps. A low concentration of border traps guarantees a good performance of MIS capacitors. This paper is focused on the investigation of the charge components within the MOF and near the MOF/substrate interface in ultrathin Cu3(BTC)2 films grown directly on silicon wafers by an innovative spray-coating method. The layer thickness was easily handled by varying the number of spray cycles in the deposition process. The crystal structure and morphology of the films were characterized via X-ray diffraction and Raman spectroscopy. Afterwards, the film thickness was determined via confocal microscopy. The electrical characterization was performed via capacitance-voltage (C-V) measurements in forward and reverse direction at room temperature and at different frequencies. Our results provide evidence of the existence of positive fixed charges in the Cu3(BTC)2 dielectric layer as well as of the presence of border traps which causes hysteresis in the C-V response.

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Impact of border traps in ultrathin metal-organic framework Cu3(BTC)2 based capacitors. / Montañez, Liz M.; Strauß, Ina; Caro, Jürgen et al.
in: Microporous and Mesoporous Materials, Jahrgang 277, 15.03.2019, S. 136-141.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Montañez LM, Strauß I, Caro J, Osten HJ. Impact of border traps in ultrathin metal-organic framework Cu3(BTC)2 based capacitors. Microporous and Mesoporous Materials. 2019 Mär 15;277:136-141. Epub 2018 Okt 28. doi: 10.1016/j.micromeso.2018.10.029
Montañez, Liz M. ; Strauß, Ina ; Caro, Jürgen et al. / Impact of border traps in ultrathin metal-organic framework Cu3(BTC)2 based capacitors. in: Microporous and Mesoporous Materials. 2019 ; Jahrgang 277. S. 136-141.
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abstract = "The synthesis of metal-organic frameworks (MOFs) as thin films allows their integration into different electronic devices. Particularly, their application in metal-insulating-semiconductor (MIS) capacitors provides a comprehensive study of the electrical transport mechanism and, therefore, of the effect of border traps. A low concentration of border traps guarantees a good performance of MIS capacitors. This paper is focused on the investigation of the charge components within the MOF and near the MOF/substrate interface in ultrathin Cu3(BTC)2 films grown directly on silicon wafers by an innovative spray-coating method. The layer thickness was easily handled by varying the number of spray cycles in the deposition process. The crystal structure and morphology of the films were characterized via X-ray diffraction and Raman spectroscopy. Afterwards, the film thickness was determined via confocal microscopy. The electrical characterization was performed via capacitance-voltage (C-V) measurements in forward and reverse direction at room temperature and at different frequencies. Our results provide evidence of the existence of positive fixed charges in the Cu3(BTC)2 dielectric layer as well as of the presence of border traps which causes hysteresis in the C-V response.",
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