Details
Originalsprache | Englisch |
---|---|
Seiten (von - bis) | 120-125 |
Seitenumfang | 6 |
Fachzeitschrift | Energy Procedia |
Jahrgang | 124 |
Publikationsstatus | Veröffentlicht - 21 Sept. 2017 |
Veranstaltung | 7th International Conference on Silicon Photovoltaics, SiliconPV 2017 - Freiburg, Deutschland Dauer: 3 Apr. 2017 → 5 Apr. 2017 |
Abstract
This paper investigates process-induced variations of the open-circuit voltage (Voc) using voltage-dependent quantum efficiency measurements. By means of device modelling we show that this method is able to explain the Voc difference of two solar cells, even if they show identical electrical behaviour under short-circuit condition. This paper furthermore explains how the origin of Voc variations can be classified into emitter, base and rear of the solar cell. The simulation results have been experimentally verified with industrial-type passivated emitter and rear cells (PERC) cells made from p-type Czochralski wafers. The proposed analysis method is an attractive way for monitoring Voc variations of solar cells in industrial mass production since there is no need for specially prepared test structures.
ASJC Scopus Sachgebiete
- Energie (insg.)
- Allgemeine Energie
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in: Energy Procedia, Jahrgang 124, 21.09.2017, S. 120-125.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Identifying the location of recombination from voltage-dependent quantum efficiency measurements
AU - Min, Byungsul
AU - Kruse, Christian
AU - Schinke, Carsten
AU - Wolf, Martin
AU - Müller, Matthias
AU - Sträter, Hendrik
AU - Wagner, Matthias
AU - Bothe, Karsten
AU - Brendel, Rolf
N1 - Funding Information: The authors thank M. Vogt for a critical reading of the manuscript. This work was funded by the Federal Ministry for Economic Affairs and Energy (FKZ 0325777). Publisher Copyright: © 2017 The Authors. Published by Elsevier Ltd. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/9/21
Y1 - 2017/9/21
N2 - This paper investigates process-induced variations of the open-circuit voltage (Voc) using voltage-dependent quantum efficiency measurements. By means of device modelling we show that this method is able to explain the Voc difference of two solar cells, even if they show identical electrical behaviour under short-circuit condition. This paper furthermore explains how the origin of Voc variations can be classified into emitter, base and rear of the solar cell. The simulation results have been experimentally verified with industrial-type passivated emitter and rear cells (PERC) cells made from p-type Czochralski wafers. The proposed analysis method is an attractive way for monitoring Voc variations of solar cells in industrial mass production since there is no need for specially prepared test structures.
AB - This paper investigates process-induced variations of the open-circuit voltage (Voc) using voltage-dependent quantum efficiency measurements. By means of device modelling we show that this method is able to explain the Voc difference of two solar cells, even if they show identical electrical behaviour under short-circuit condition. This paper furthermore explains how the origin of Voc variations can be classified into emitter, base and rear of the solar cell. The simulation results have been experimentally verified with industrial-type passivated emitter and rear cells (PERC) cells made from p-type Czochralski wafers. The proposed analysis method is an attractive way for monitoring Voc variations of solar cells in industrial mass production since there is no need for specially prepared test structures.
KW - open-circuit voltage
KW - PERC
KW - process monitoring
KW - quantum efficiency
UR - http://www.scopus.com/inward/record.url?scp=85031900075&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2017.09.324
DO - 10.1016/j.egypro.2017.09.324
M3 - Conference article
AN - SCOPUS:85031900075
VL - 124
SP - 120
EP - 125
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 7th International Conference on Silicon Photovoltaics, SiliconPV 2017
Y2 - 3 April 2017 through 5 April 2017
ER -