How to Obtain Solderable Al/Ni:V/Ag Contacts

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

Autoren

  • Martin Lehr
  • Frank Heinemeyer
  • Stefan Eidelloth
  • Till Brendemühl
  • Fabian Kiefer
  • Daniel Münster
  • Anja Lohse
  • Miriam Berger
  • Nadja Braun
  • Rolf Brendel

Organisationseinheiten

Externe Organisationen

  • Institut für Solarenergieforschung GmbH (ISFH)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)375-379
Seitenumfang5
FachzeitschriftEnergy Procedia
Jahrgang38
Frühes Online-Datum5 Sept. 2013
PublikationsstatusVeröffentlicht - 2013
Veranstaltung3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013 - Hamelin, Deutschland
Dauer: 25 März 201327 März 2013

Abstract

We investigate process sequences for obtaining solderable Al/Ni:V/Ag contacts to PERC-type crystalline Si solar cells by in-line Al evaporation. For a high cell efficiency the evaporated aluminum must be annealed at 350 °C for about 5 min. We find that annealing the Al/Ni:V/Ag metallization stack at temperatures above 150 °C destroys the solderability of the wetting layer. A solution for this problem is to first deposit the 2.5 μm Al layer by evaporation, then anneal the cell at 350 °C for 10 min, and finally sputter a double layer of Ni:V/Ag with respective thickness values of 200 nm and 25 nm. This process leads to a contact resistivity lower than 1 mΩcm2. The solderablility is proven by a peel force greater than 3 N/mm. We present a solderable PERC cell with Al/Ni:V/Ag rear side metallization and an efficiency of 18.9%.

ASJC Scopus Sachgebiete

Zitieren

How to Obtain Solderable Al/Ni:V/Ag Contacts. / Lehr, Martin; Heinemeyer, Frank; Eidelloth, Stefan et al.
in: Energy Procedia, Jahrgang 38, 2013, S. 375-379.

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

Lehr, M, Heinemeyer, F, Eidelloth, S, Brendemühl, T, Kiefer, F, Münster, D, Lohse, A, Berger, M, Braun, N & Brendel, R 2013, 'How to Obtain Solderable Al/Ni:V/Ag Contacts', Energy Procedia, Jg. 38, S. 375-379. https://doi.org/10.1016/j.egypro.2013.07.292, https://doi.org/10.15488/1004
Lehr, M., Heinemeyer, F., Eidelloth, S., Brendemühl, T., Kiefer, F., Münster, D., Lohse, A., Berger, M., Braun, N., & Brendel, R. (2013). How to Obtain Solderable Al/Ni:V/Ag Contacts. Energy Procedia, 38, 375-379. https://doi.org/10.1016/j.egypro.2013.07.292, https://doi.org/10.15488/1004
Lehr M, Heinemeyer F, Eidelloth S, Brendemühl T, Kiefer F, Münster D et al. How to Obtain Solderable Al/Ni:V/Ag Contacts. Energy Procedia. 2013;38:375-379. Epub 2013 Sep 5. doi: 10.1016/j.egypro.2013.07.292, 10.15488/1004
Lehr, Martin ; Heinemeyer, Frank ; Eidelloth, Stefan et al. / How to Obtain Solderable Al/Ni:V/Ag Contacts. in: Energy Procedia. 2013 ; Jahrgang 38. S. 375-379.
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@article{008d46a7fee141108f397766945f1b6b,
title = "How to Obtain Solderable Al/Ni:V/Ag Contacts",
abstract = "We investigate process sequences for obtaining solderable Al/Ni:V/Ag contacts to PERC-type crystalline Si solar cells by in-line Al evaporation. For a high cell efficiency the evaporated aluminum must be annealed at 350 °C for about 5 min. We find that annealing the Al/Ni:V/Ag metallization stack at temperatures above 150 °C destroys the solderability of the wetting layer. A solution for this problem is to first deposit the 2.5 μm Al layer by evaporation, then anneal the cell at 350 °C for 10 min, and finally sputter a double layer of Ni:V/Ag with respective thickness values of 200 nm and 25 nm. This process leads to a contact resistivity lower than 1 mΩcm2. The solderablility is proven by a peel force greater than 3 N/mm. We present a solderable PERC cell with Al/Ni:V/Ag rear side metallization and an efficiency of 18.9%.",
keywords = "Evaporated aluminum, Metallization, Silicon solar cell, Solderability",
author = "Martin Lehr and Frank Heinemeyer and Stefan Eidelloth and Till Brendem{\"u}hl and Fabian Kiefer and Daniel M{\"u}nster and Anja Lohse and Miriam Berger and Nadja Braun and Rolf Brendel",
year = "2013",
doi = "10.1016/j.egypro.2013.07.292",
language = "English",
volume = "38",
pages = "375--379",
note = "3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013 ; Conference date: 25-03-2013 Through 27-03-2013",

}

Download

TY - JOUR

T1 - How to Obtain Solderable Al/Ni:V/Ag Contacts

AU - Lehr, Martin

AU - Heinemeyer, Frank

AU - Eidelloth, Stefan

AU - Brendemühl, Till

AU - Kiefer, Fabian

AU - Münster, Daniel

AU - Lohse, Anja

AU - Berger, Miriam

AU - Braun, Nadja

AU - Brendel, Rolf

PY - 2013

Y1 - 2013

N2 - We investigate process sequences for obtaining solderable Al/Ni:V/Ag contacts to PERC-type crystalline Si solar cells by in-line Al evaporation. For a high cell efficiency the evaporated aluminum must be annealed at 350 °C for about 5 min. We find that annealing the Al/Ni:V/Ag metallization stack at temperatures above 150 °C destroys the solderability of the wetting layer. A solution for this problem is to first deposit the 2.5 μm Al layer by evaporation, then anneal the cell at 350 °C for 10 min, and finally sputter a double layer of Ni:V/Ag with respective thickness values of 200 nm and 25 nm. This process leads to a contact resistivity lower than 1 mΩcm2. The solderablility is proven by a peel force greater than 3 N/mm. We present a solderable PERC cell with Al/Ni:V/Ag rear side metallization and an efficiency of 18.9%.

AB - We investigate process sequences for obtaining solderable Al/Ni:V/Ag contacts to PERC-type crystalline Si solar cells by in-line Al evaporation. For a high cell efficiency the evaporated aluminum must be annealed at 350 °C for about 5 min. We find that annealing the Al/Ni:V/Ag metallization stack at temperatures above 150 °C destroys the solderability of the wetting layer. A solution for this problem is to first deposit the 2.5 μm Al layer by evaporation, then anneal the cell at 350 °C for 10 min, and finally sputter a double layer of Ni:V/Ag with respective thickness values of 200 nm and 25 nm. This process leads to a contact resistivity lower than 1 mΩcm2. The solderablility is proven by a peel force greater than 3 N/mm. We present a solderable PERC cell with Al/Ni:V/Ag rear side metallization and an efficiency of 18.9%.

KW - Evaporated aluminum

KW - Metallization

KW - Silicon solar cell

KW - Solderability

UR - http://www.scopus.com/inward/record.url?scp=84898717307&partnerID=8YFLogxK

U2 - 10.1016/j.egypro.2013.07.292

DO - 10.1016/j.egypro.2013.07.292

M3 - Conference article

AN - SCOPUS:84898717307

VL - 38

SP - 375

EP - 379

JO - Energy Procedia

JF - Energy Procedia

SN - 1876-6102

T2 - 3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013

Y2 - 25 March 2013 through 27 March 2013

ER -