Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 375-379 |
| Seitenumfang | 5 |
| Fachzeitschrift | Energy Procedia |
| Jahrgang | 38 |
| Frühes Online-Datum | 5 Sept. 2013 |
| Publikationsstatus | Veröffentlicht - 2013 |
| Veranstaltung | 3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013 - Hamelin, Deutschland Dauer: 25 März 2013 → 27 März 2013 |
Abstract
We investigate process sequences for obtaining solderable Al/Ni:V/Ag contacts to PERC-type crystalline Si solar cells by in-line Al evaporation. For a high cell efficiency the evaporated aluminum must be annealed at 350 °C for about 5 min. We find that annealing the Al/Ni:V/Ag metallization stack at temperatures above 150 °C destroys the solderability of the wetting layer. A solution for this problem is to first deposit the 2.5 μm Al layer by evaporation, then anneal the cell at 350 °C for 10 min, and finally sputter a double layer of Ni:V/Ag with respective thickness values of 200 nm and 25 nm. This process leads to a contact resistivity lower than 1 mΩcm2. The solderablility is proven by a peel force greater than 3 N/mm. We present a solderable PERC cell with Al/Ni:V/Ag rear side metallization and an efficiency of 18.9%.
ASJC Scopus Sachgebiete
- Energie (insg.)
- Allgemeine Energie
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in: Energy Procedia, Jahrgang 38, 2013, S. 375-379.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - How to Obtain Solderable Al/Ni:V/Ag Contacts
AU - Lehr, Martin
AU - Heinemeyer, Frank
AU - Eidelloth, Stefan
AU - Brendemühl, Till
AU - Kiefer, Fabian
AU - Münster, Daniel
AU - Lohse, Anja
AU - Berger, Miriam
AU - Braun, Nadja
AU - Brendel, Rolf
PY - 2013
Y1 - 2013
N2 - We investigate process sequences for obtaining solderable Al/Ni:V/Ag contacts to PERC-type crystalline Si solar cells by in-line Al evaporation. For a high cell efficiency the evaporated aluminum must be annealed at 350 °C for about 5 min. We find that annealing the Al/Ni:V/Ag metallization stack at temperatures above 150 °C destroys the solderability of the wetting layer. A solution for this problem is to first deposit the 2.5 μm Al layer by evaporation, then anneal the cell at 350 °C for 10 min, and finally sputter a double layer of Ni:V/Ag with respective thickness values of 200 nm and 25 nm. This process leads to a contact resistivity lower than 1 mΩcm2. The solderablility is proven by a peel force greater than 3 N/mm. We present a solderable PERC cell with Al/Ni:V/Ag rear side metallization and an efficiency of 18.9%.
AB - We investigate process sequences for obtaining solderable Al/Ni:V/Ag contacts to PERC-type crystalline Si solar cells by in-line Al evaporation. For a high cell efficiency the evaporated aluminum must be annealed at 350 °C for about 5 min. We find that annealing the Al/Ni:V/Ag metallization stack at temperatures above 150 °C destroys the solderability of the wetting layer. A solution for this problem is to first deposit the 2.5 μm Al layer by evaporation, then anneal the cell at 350 °C for 10 min, and finally sputter a double layer of Ni:V/Ag with respective thickness values of 200 nm and 25 nm. This process leads to a contact resistivity lower than 1 mΩcm2. The solderablility is proven by a peel force greater than 3 N/mm. We present a solderable PERC cell with Al/Ni:V/Ag rear side metallization and an efficiency of 18.9%.
KW - Evaporated aluminum
KW - Metallization
KW - Silicon solar cell
KW - Solderability
UR - http://www.scopus.com/inward/record.url?scp=84898717307&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2013.07.292
DO - 10.1016/j.egypro.2013.07.292
M3 - Conference article
AN - SCOPUS:84898717307
VL - 38
SP - 375
EP - 379
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013
Y2 - 25 March 2013 through 27 March 2013
ER -