Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 40-42 |
| Seitenumfang | 3 |
| Fachzeitschrift | Physica Status Solidi - Rapid Research Letters |
| Jahrgang | 3 |
| Ausgabenummer | 2-3 |
| Publikationsstatus | Veröffentlicht - 2009 |
| Extern publiziert | Ja |
Abstract
Multicrystalline silicon solar cells typically show hard breakdown beginning from about -13 V bias, which leads to the well-known hot-spot problem. Using special lock-in thermography techniques, hard breakdown has been found to occur in regions of avalanche multiplication. A systematic study of these regions by various electron microscopy techniques has shown that the avalanche breakdown occurs at cone-shaped holes, located at dislocations and caused by acidic texture etch. At their bottom, these etch pits lead to a strongly curved p-n junction exhibiting an electrostatic tip effect which quantitatively explains the field enhancement needed for enabling avalanche breakdown.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi - Rapid Research Letters, Jahrgang 3, Nr. 2-3, 2009, S. 40-42.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Hot spots in multicrystalline silicon solar cells
T2 - Avalanche breakdown due to etch pits
AU - Bauer, J.
AU - Wagner, J. M.
AU - Lotnyk, A.
AU - Blumtritt, H.
AU - Lim, B.
AU - Schmidt, J.
AU - Breitenstein, O.
PY - 2009
Y1 - 2009
N2 - Multicrystalline silicon solar cells typically show hard breakdown beginning from about -13 V bias, which leads to the well-known hot-spot problem. Using special lock-in thermography techniques, hard breakdown has been found to occur in regions of avalanche multiplication. A systematic study of these regions by various electron microscopy techniques has shown that the avalanche breakdown occurs at cone-shaped holes, located at dislocations and caused by acidic texture etch. At their bottom, these etch pits lead to a strongly curved p-n junction exhibiting an electrostatic tip effect which quantitatively explains the field enhancement needed for enabling avalanche breakdown.
AB - Multicrystalline silicon solar cells typically show hard breakdown beginning from about -13 V bias, which leads to the well-known hot-spot problem. Using special lock-in thermography techniques, hard breakdown has been found to occur in regions of avalanche multiplication. A systematic study of these regions by various electron microscopy techniques has shown that the avalanche breakdown occurs at cone-shaped holes, located at dislocations and caused by acidic texture etch. At their bottom, these etch pits lead to a strongly curved p-n junction exhibiting an electrostatic tip effect which quantitatively explains the field enhancement needed for enabling avalanche breakdown.
UR - http://www.scopus.com/inward/record.url?scp=70349643144&partnerID=8YFLogxK
U2 - 10.1002/pssr.200802250
DO - 10.1002/pssr.200802250
M3 - Article
AN - SCOPUS:70349643144
VL - 3
SP - 40
EP - 42
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 2-3
ER -