Hole-capture competition between a single quantum dot and an ionized acceptor

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OriginalspracheEnglisch
Aufsatznummer125426
FachzeitschriftPhysical Review B
Jahrgang98
Ausgabenummer12
PublikationsstatusVeröffentlicht - 15 Sept. 2018

Abstract

We study the competition of hole capture between an In(Ga)As quantum dot and a directly adjacent ionized impurity in view of spin-photon interfaces. The Kerr rotation noise spectroscopy at 4.2 K shows that the hole-capture probability of the In(Ga)As quantum dot is about one order of magnitude higher compared to the hole-capture probability of the ionized impurity and suggests that a simultaneous occupation of quantum dot and impurity by a hole is efficiently suppressed due to Coulomb interaction. A theoretical model of interconnected spin and charge noise allows the quantitative specification of all relevant time scales.

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Hole-capture competition between a single quantum dot and an ionized acceptor. / Wiegand, J.; Smirnov, D. S.; Osberghaus, J. et al.
in: Physical Review B, Jahrgang 98, Nr. 12, 125426, 15.09.2018.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Wiegand J, Smirnov DS, Osberghaus J, Abaspour L, Hübner J, Oestreich M. Hole-capture competition between a single quantum dot and an ionized acceptor. Physical Review B. 2018 Sep 15;98(12):125426. doi: 10.48550/arXiv.1808.05574, 10.1103/PhysRevB.98.125426
Wiegand, J. ; Smirnov, D. S. ; Osberghaus, J. et al. / Hole-capture competition between a single quantum dot and an ionized acceptor. in: Physical Review B. 2018 ; Jahrgang 98, Nr. 12.
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